Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.

Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.

Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.

Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.

A method is disclosed for producing an electronic component including at least two functional layers. One of the functional layers has channels, open towards the other functional layer, which run inwards from one edge of the functional layer. Further, an adhesive which contacts the adjacent functional layers is located in at least one of the channels, and a hardening of the adhesive is effected by introducing UV radiation via the channels. Furthermore an electronic component is also disclosed, including at least two adjacent functional layers adhesively bonded together in sandwich-like fashion, wherein at least one of the functional layers has channels which extend inwards from at least one edge of the functional layer and an adhesive hardened by UV radiation is arranged in the channels. A detector element of a radiation detector including such an electronic component and a radiation detector having such a detector element are also disclosed.

A method is disclosed for producing an electronic component including at least two functional layers. One of the functional layers has channels, open towards the other functional layer, which run inwards from one edge of the functional layer. Further, an adhesive which contacts the adjacent functional layers is located in at least one of the channels, and a hardening of the adhesive is effected by introducing UV radiation via the channels. Furthermore an electronic component is also disclosed, including at least two adjacent functional layers adhesively bonded together in sandwich-like fashion, wherein at least one of the functional layers has channels which extend inwards from at least one edge of the functional layer and an adhesive hardened by UV radiation is arranged in the channels. A detector element of a radiation detector including such an electronic component and a radiation detector having such a detector element are also disclosed.

An X-ray detection substrate is provided. The X-ray detection substrate includes: a base, including at least a detection function region; a drive circuit layer, including a plurality of detection pixel circuits disposed in the detection function region; a first electrode layer, disposed in the detection function region and including a plurality of first electrodes that are disconnected from each other and arranged in an array, wherein each first electrode is correspondingly connected to one detection pixel circuit; a conversion material layer, disposed in the detection function region and covering the first electrode layer, wherein at least one surface, parallel to a thickness direction of the base, of the conversion material layer is an X-ray receiving surface; and a second electrode layer, disposed in the detection function region and covering the conversion material layer.

An X-ray detection substrate is provided. The X-ray detection substrate includes: a base, including at least a detection function region; a drive circuit layer, including a plurality of detection pixel circuits disposed in the detection function region; a first electrode layer, disposed in the detection function region and including a plurality of first electrodes that are disconnected from each other and arranged in an array, wherein each first electrode is correspondingly connected to one detection pixel circuit; a conversion material layer, disposed in the detection function region and covering the first electrode layer, wherein at least one surface, parallel to a thickness direction of the base, of the conversion material layer is an X-ray receiving surface; and a second electrode layer, disposed in the detection function region and covering the conversion material layer.

A through-slit is provided in a semiconductor wafer. A first virtual cutting line defines a chip portion including an energy ray sensitive region as viewed from a direction perpendicular to a first main surface. The shortest distance from a second virtual cutting line to the edge of a second semiconductor region is smaller than the shortest distance from the first virtual cutting line to the edge of the second semiconductor region. The through-slit penetrates through the semiconductor wafer in the thickness direction along the second virtual cutting line. A side surface to which a first semiconductor region is exposed is formed in the chip portion by providing the through-slit. A fourth semiconductor region of a first conductivity type is provided on the side surface side of the chip portion by adding impurities to the side surface to which the first semiconductor region is exposed.

A through-slit is provided in a semiconductor wafer. A first virtual cutting line defines a chip portion including an energy ray sensitive region as viewed from a direction perpendicular to a first main surface. The shortest distance from a second virtual cutting line to the edge of a second semiconductor region is smaller than the shortest distance from the first virtual cutting line to the edge of the second semiconductor region. The through-slit penetrates through the semiconductor wafer in the thickness direction along the second virtual cutting line. A side surface to which a first semiconductor region is exposed is formed in the chip portion by providing the through-slit. A fourth semiconductor region of a first conductivity type is provided on the side surface side of the chip portion by adding impurities to the side surface to which the first semiconductor region is exposed.