Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same, in which a photo-sensitivity is improved by increasing a fill factor, a stability of the PIN diode is improved, and generation of parasitic capacitance is reduced or minimized. In one embodiment, the PIN diode maximally extends so that electrodes and contact holes of the thin-film transistor is disposed inside the PIN diode. A planarization layer of organic material is present between the electrodes or wirings. Further, a light receiving region of the PIN diode is increased or maximized by positioning the bias line to overlap the data line or the gate line so as not to overlap with the PIN diode.

Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same, in which a photo-sensitivity is improved by increasing a fill factor, a stability of the PIN diode is improved, and generation of parasitic capacitance is reduced or minimized. In one embodiment, the PIN diode maximally extends so that electrodes and contact holes of the thin-film transistor is disposed inside the PIN diode. A planarization layer of organic material is present between the electrodes or wirings. Further, a light receiving region of the PIN diode is increased or maximized by positioning the bias line to overlap the data line or the gate line so as not to overlap with the PIN diode.

Provided herein is a diamond gammavoltaic cell comprising: a diamond body having a diamond body surface including first and second opposing surfaces; a low-barrier electrical contact formed on the first surface; and a high-barrier electrical contact formed on the second surface, wherein the diamond body surface that is not in contact with either the low-barrier electrical contact or the high-barrier electrical contact is at least partially surface transfer doped to provide a p-type surface.

A photo detector including a transistor and a charge storing component is provided. The transistor includes a gate, a source and a drain. The charge storing component is electrically connected with the transistor, and includes a top electrode and a bottom electrode. The source of the transistor, the drain of the transistor and the bottom electrode of the charge storing component are formed of a semiconductor layer.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

Disclosed herein is a method comprising: forming one or more blobs within a footprint of a pixel of a photodetector; wherein the blobs comprise quantum dots configured to emit a pulse of visible light upon absorbing a particle of radiation; wherein the pixel is configured to detect the pulse of visible light. Also disclosed herein is a radiation detector, comprising: an array of discrete blobs with quantum dots configured to emit a pulse of visible light upon absorbing a particle of radiation; an electronic system configured to detect the particle of radiation by detecting the pulse of visible light.

A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layets of the detection pixel units are mutually independent.

A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layets of the detection pixel units are mutually independent.

A photodiode for use in detecting X-rays and/or gamma rays is disclosed. The photodiode comprises InGaP arranged and configured to absorb X-rays and/or gamma-rays incident on the photodiode and generate charge-carriers in response thereto. The detector may be provided in an X-ray or gamma-ray photon counting spectrometer.

A photodiode for use in detecting X-rays and/or gamma rays is disclosed. The photodiode comprises InGaP arranged and configured to absorb X-rays and/or gamma-rays incident on the photodiode and generate charge-carriers in response thereto. The detector may be provided in an X-ray or gamma-ray photon counting spectrometer.