An optical sensor module and a sensor chip thereof are provided. The optical sensor module includes a substrate, a sensor chip and a passive chip. The sensor chip is disposed on the substrate, and the sensor chip includes a chip body having an active region located at a top side thereof and a recess portion depressed from a top surface of the chip body. The passive chip is accommodated in the recess portion, and a depth of the recess portion is greater than a thickness of the passive chip.

An optical sensor module and a sensor chip thereof are provided. The optical sensor module includes a substrate, a sensor chip and a passive chip. The sensor chip is disposed on the substrate, and the sensor chip includes a chip body having an active region located at a top side thereof and a recess portion depressed from a top surface of the chip body. The passive chip is accommodated in the recess portion, and a depth of the recess portion is greater than a thickness of the passive chip.

The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.

The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.

A photoelectric conversion device includes a pixel array including pixels arranged in rows and columns, each of the pixels being configured to output a pixel signal, and including an optical filter and a photoelectric conversion unit, wherein the optical filters of different colors are arranged for each rows and each columns, a holding circuit including first holding units for each of the columns, the first holding units being configured to respectively hold the pixel signals read out from the pixels including the optical filters of different colors in one column of the pixel array in parallel, an output signal line, and a readout circuit configured to successively read out the pixel signals of pixels including the optical filters of the same color from the first holding units for each of the columns to the output signal line.

A photoelectric conversion device includes a pixel array including pixels arranged in rows and columns, each of the pixels being configured to output a pixel signal, and including an optical filter and a photoelectric conversion unit, wherein the optical filters of different colors are arranged for each rows and each columns, a holding circuit including first holding units for each of the columns, the first holding units being configured to respectively hold the pixel signals read out from the pixels including the optical filters of different colors in one column of the pixel array in parallel, an output signal line, and a readout circuit configured to successively read out the pixel signals of pixels including the optical filters of the same color from the first holding units for each of the columns to the output signal line.

The present invention is concerned with a hair removal device for removal of red hairs that has a light emission unit having a substrate and a plurality of first LED dies emitting at a peak emission wavelength in a wavelength range of between about 480 nm and about 510 nm, the first LED dies being mounted on the substrate on an area in the range of between about 0.2 cm.sup.2 and about 100 cm.sup.2, wherein the hair removal device is arranged to emit a treatment light pulse by the first LED dies having a pulse length in the range of between about 30 ms and about 200 ms, and the first LED dies have a radiant flux such that a radiant fluence on the skin of a user in the range of between about 3 J/cm.sup.2 and about 6 J/cm.sup.2 is achieved by application of the treatment light pulse.

A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a front side of a substrate 16 of opposite doping type with contact pads on the front side at respective ends of a first doped region of the pair. A voltage source applies a potential difference between the contact pads of the first doped region. On the front side, a contact pad of the second doped region of the pair provides an analog output signal representative of a longitudinal position of a center of gravity of an incident light pattern along the doped regions without external circuitry processing the output signal to obtain a readout of the longitudinal position. A resistive line may directly overly, abut and be in contact with at least a portion of the first doped region. A conductive line may directly overly, abut and be in contact with at least a portion of the second doped region. No backside contact or processing of the substrate is required or employed.

A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a front side of a substrate 16 of opposite doping type with contact pads on the front side at respective ends of a first doped region of the pair. A voltage source applies a potential difference between the contact pads of the first doped region. On the front side, a contact pad of the second doped region of the pair provides an analog output signal representative of a longitudinal position of a center of gravity of an incident light pattern along the doped regions without external circuitry processing the output signal to obtain a readout of the longitudinal position. A resistive line may directly overly, abut and be in contact with at least a portion of the first doped region. A conductive line may directly overly, abut and be in contact with at least a portion of the second doped region. No backside contact or processing of the substrate is required or employed.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.