Provided is a photodetection apparatus which includes a mounting board, and an optical sensor device that includes a first surface on the mounting board side and a second surface on a side opposite to the mounting board, and is mounted on the mounting board. The optical sensor device includes an optical sensor that includes a light receiving surface on the second surface side, a signal processing circuit that is electrically connected to the optical sensor, and a lead frame that is provided on the second surface side with respect to the signal processing circuit, and shields a surface of the signal processing circuit on the second surface side. The mounting board has a conductive pattern that faces the signal processing circuit and shields a surface of the signal processing circuit on the first surface side.

A fingerprint identification structure and a display panel are disclosed. display panel includes a fingerprint identification structure. The fingerprint identification structure includes a light energy switch and a thermosensitive light path adjustment structure. The light energy switch is configured to switch from an open circuit to a closed circuit under light irradiation. The thermosensitive light path adjustment structure is connected to a surface of the light energy switch, is able to transmit light internally, and is configured to adjust a light path of light to drive the light to irradiate the light energy switch when receiving a heat source.

To provide a ranging device having improved quantum efficiency and resolution. The present disclosure provides a ranging device including: a semiconductor layer having a first surface and a second surface opposite to the first surface; a lens provided on the second surface side; first and second charge storage sections provided in the semiconductor layer on the first surface side; a photoelectric conversion section that is in contact with the semiconductor layer on the first surface side, the photoelectric conversion section including a material different from a material of the semiconductor layer; first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section; and a first wire provided on the first surface side and electrically connected to the photoelectric conversion section.

Disclosed herein is a device that includes at least one functional semiconductor element; and static electric field source(s) associated with the at least one functional semiconductor element, the static electric field source(s) comprising at least one electret component and having a heterogeneous charge distribution. Also disclosed herein is a device includes a functional semiconductor element; a static electric field source comprising at least one electret element, the static electric field source imparting a static electric field to the functional semiconductor element; and at least one nuclear radiation source for continuously imparting nuclear beta radiation to the at least one electret element and/or the functional semiconductor element. Use of at least a radioactive beta source for replenishing charge in an electret, as well as use of at least a radioactive beta source for simultaneously replenishing charge in an electret and modifying charge mobility of a semiconductor material, are also disclosed. A nuclear battery includes at least one functional semiconductor element; at least one radiation source imparting nuclear radiation to the at least one functional semiconductor element; and at least one electret imparting a static electric field to the at least one functional semiconductor element.

Method and apparatus for annealing micro-scale or macro solar cells that can contain lithium or hydrogen. Heaters, a current that is applied in forward or reverse direction, or open-circuiting the cells are used optionally with a laser or other light source to increase the temperature of the cells to perform periodic anneals to recover energy conversion efficiency lost due to environmental conditions such as radiation damage and maintain desired operational conditions. Larger amounts of additional energy are harvested with the improved efficiency of the cells. Illuminating the cells with specific wavelengths of light can enhance the diffusion of the lithium or hydrogen, or their binding and unbinding from dopants or defects, in the silicon lattice. The lithium or hydrogen can diffuse into the cells via their inclusion in the polysilicon layer forming a tunneling oxide passivated contact. Dopants in the silicon can reduce annealing time and temperature.

The present technology relates to a light-receiving element and a distance-measuring module. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, a second charge detection portion arranged around the second voltage application portion, and a pixel separation portion that separates the semiconductor layer at least up to a predetermined depth in a boundary portion of adjacent pixels, and a third voltage is applied to the pixel separation portion. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Described herein are systems and methods that that mitigate avalanche photodiode (APD) blinding and allow for improved accuracy in the detection of a multi-return light signal. A blinding spot may occur due to saturation of a primary APD. The systems and methods include the incorporation of a redundant APD and the utilization of time diversity and space diversity. Detection by the APDs is activated by a bias signal. The redundant APD receives a time delayed bias signal compared to the primary APD. Additionally, the redundant APD is positioned off the main focal plane in order to attenuate an output of the redundant APD. With attenuation, the redundant APD may not saturate and may have a successful detection during the blinding spot of the primary APD. Embodiments may include multiple primary APDs and multiple secondary APDs.

An optical package structure includes a substrate, an emitter, a first detector and a light-absorption material. The substrate has a first surface and a second surface opposite to the first surface, the substrate includes a via defining a third surface extending from the first surface to the second surface. The emitter is disposed on the first surface of the substrate. The first detector is disposed on the first surface and aligned with the via of the substrate. The light-absorption material is disposed on the third surface of the substrate.

The present disclosure relates to a display panel and a method for manufacturing the same. The display panel includes an infrared receiver. The infrared receiver is disposed on a substrate and is located on one side of the substrate which is close to a light emitting surface, wherein the infrared receiver is configured to receive infrared light incident through the light emitting surface.

A system for molecular mapping includes a semiconductor substrate defining a reservoir to receive a sample of molecules and a nanofluidic channel in fluid communication with the reservoir. The system also includes a plurality of electrodes, in electrical communication with the nanofluidic channel, to electrophoretically trap the sample of molecules in the nanofluidic channel. At least one avalanche photodiode is fabricated in the semiconductor substrate and disposed within an optical near-field of the nanofluidic channel to detect fluorescence emission from at least one molecule in the sample of molecules.