H01L31/165

Power source and method of forming same

Various embodiments of a power source and method of forming such power source are disclosed. The power source can include a substrate and a cavity disposed in a first major surface of the substrate. The power source can also include radioactive material disposed within the cavity, where the radioactive material emits radiation particles; and particle converting material disposed within the cavity, where the particle converting material converts one or more radiation particles emitted by the radioactive material into light. The power source further includes a sealing layer disposed such that the particle converting material and the radioactive material are hermetically sealed within the cavity, and a photovoltaic device disposed adjacent the substrate. The photovoltaic device can convert at least a portion of the light emitted by the particle converting material that is incident upon an input surface of the photovoltaic device into electrical energy.

Systems and methods for mitigating avalanche photodiode (APD) blinding

Described herein are systems and methods that that mitigate avalanche photodiode (APD) blinding and allow for improved accuracy in the detection of a multi-return light signal. A blinding spot may occur due to saturation of a primary APD. The systems and methods include the incorporation of a redundant APD and the utilization of time diversity and space diversity. Detection by the APDs is activated by a bias signal. The redundant APD receives a time delayed bias signal compared to the primary APD. Additionally, the redundant APD is positioned off the main focal plane in order to attenuate an output of the redundant APD. With attenuation, the redundant APD may not saturate and may have a successful detection during the blinding spot of the primary APD. Embodiments may include multiple primary APDs and multiple secondary APDs.

Optical sensor and method of manufacture

The present disclosure relates to a sensor comprising: an array of photodetectors comprising a first subarray of at least one photodetector and a second subarray of at least one photodetector; a first optical arrangement to direct incoming photons toward the first subarray; and a second optical arrangement to direct incoming photons toward the second subarray.

LIGHT-OUTPUT-POWER SELF-AWARENESS LIGHT-EMITTING DEVICE
20200194610 · 2020-06-18 ·

A light emitting device includes an n-type AlGaN structure, a p-type AlGaN structure, and a light-emitting active-region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure. A first p-contact is formed on the p-type AlGaN structure defining a light-emitting structure, a second p-contact is formed on the p-type AlGaN structure defining a light-detecting structure, and an n-contact is formed on the n-type AlGaN structure serving as a common cathode for the light-emitting structure and the light-detecting structure. There is a bridge zone between the first and the second p-contacts and the p-type AlGaN structure in the bridge zone is not removed.

Optical package device

An optical package device comprises a carrier, a die, a support element, and an encapsulant. The die is on the carrier. The support element is on the carrier and adjacent to the die. The encapsulant covers the die and the support element. The encapsulant has a first top surface over the die and a second top surface adjacent to the first top surface. A ratio of a distance between the first top surface and the second top surface of the encapsulant to a distance between the die and the first top surface of the encapsulant is less than 0.1.

OPTICAL PACKAGE DEVICE

An optical package device comprises a carrier, a die, a support element, and an encapsulant. The die is on the carrier. The support element is on the carrier and adjacent to the die. The encapsulant covers the die and the support element. The encapsulant has a first top surface over the die and a second top surface adjacent to the first top surface. A ratio of a distance between the first top surface and the second top surface of the encapsulant to a distance between the die and the first top surface of the encapsulant is less than 0.1.

Systems and methods for mitigating avalanche photodiode (APD) blinding

Described herein are systems and methods that that mitigate avalanche photodiode (APD) blinding and allow for improved accuracy in the detection of a multi-return light signal. A blinding spot may occur due to saturation of a primary APD. The systems and methods include the incorporation of a redundant APD and the utilization of time diversity and space diversity. Detection by the APDs is activated by a bias signal. The redundant APD receives a time delayed bias signal compared to the primary APD. Additionally, the redundant APD is positioned off the main focal plane in order to attenuate an output of the redundant APD. With attenuation, the redundant APD may not saturate and may have a successful detection during the blinding spot of the primary APD. Embodiments may include multiple primary APDs and multiple secondary APDs.

Ranging apparatus

A ranging apparatus includes an array of light sensitive detectors configured to receive light from a light source which has been reflected by an object. The array includes a number of different zones. Readout circuitry including at least one read out channel is configured to read data output from each of the zones. A processor operates to process the data output to determine position information associated with the object.

SENSOR AND METHOD OF MANUFACTURING A SENSOR
20190334052 · 2019-10-31 ·

The present disclosure relates to a sensor comprising: an array of photodetectors comprising a first subarray of at least one photodetector and a second subarray of at least one photodetector; a first optical arrangement to direct incoming photons toward the first subarray; and a second optical arrangement to direct incoming photons toward the second subarray.

Dual gate III-switch for high voltage current relay
10447261 · 2019-10-15 · ·

Photo-switchable relays and switches and dual gate III-switches having a photo switchable normally-off region located in the channel layer of the device are disclosed where irradiation of the normally-off regions with an appropriate wavelength of radiation results in generation of charge carriers and the flow of electricity through the device being turned on and off in response to the radiation being turned on and off.