A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

A photo detector comprises a first photo diode configured to capture visible light, a second photo diode configured to capture one of infrared light or ultraviolet light, and an isolation region between the first photo diode and the second photo diode. The photo detector is capable of capturing infrared light and ultraviolet light in addition to visible light.

A photodiode fabricated using spalling techniques, and method for making the same. The photodiode including a substrate, an optical device semiconductor material layer disposed over the substrate, a p-type contact disposed over the optical device semiconductor material layer, an n-type contact disposed over the substrate, and an adhesion layer for rear illumination adhered to the bottom of the substrate. Both the substrate and the optical device semiconductor material layer comprise at least one of GaN, AlGaN or AlN.

A method for fabricating an optoelectronic semiconductor component is disclosed. A semiconductor chip is produced by singularizing a wafer. The semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region. The sacrificial region in the finished semiconductor component is not intended to emit or absorb radiation. A trench, introduced into the semiconductor layer sequence, penetrates the active layer and separates the active region from the sacrificial region. The semiconductor chip with the semiconductor layer sequence is applied on a carrier. The substrate is detached from the active region of the semiconductor layer sequence. In the sacrificial region, the semiconductor layer sequence remains mechanically connected to the substrate.

An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-.sup.10BN or h-BN or .sup.10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-.sup.10BN or h-BN or .sup.10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Semiconductor structures formed with annealing for use in the fabrication of optoelectronic devices. The semiconductor structures can include a substrate, a nucleation layer and a buffer layer. The nucleation layer and the buffer layer can be epitaxially grown and then annealed. The temperature of the annealing of the nucleation layer and the buffer layer is greater than the temperature of the epitaxial growth of the layers. The annealing reduces the dislocation density in any subsequent layers that are added to the semiconductor structures. A desorption minimizing layer epitaxially grown on the buffer layer can be used to minimize desorption during the annealing of the layer which also aids in curtailing dislocation density and cracks in the semiconductor structures.

A method of manufacturing an optoelectronic device, including: a) transferring, onto a connection surface of a control circuit, an active diode stack including at least first and second semiconductor layers of opposite conductivity types, so that the second semiconductor layer in the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one insulating layer; b) forming in the active stack trenches delimiting a plurality of diodes, the trenches extending through the insulating layer and emerging onto the connection surface of the control circuit; and c) forming in the trenches metallizations connecting the second semiconductor layer to the connection surface of the control circuit.

We disclose herewith a heterostructure-based infra-red (IR) device comprising a substrate comprising an etched portion and a substrate portion; a device region on the etched portion and the substrate portion, the device region comprising a membrane region which is an area over the etched portion of the substrate. At least one heterostructure-based element is formed at least partially within or on the membrane region and the heterostructure-based element comprises at least one two dimensional carrier gas.