A photoelectric conversion element for detecting the spot size of incident light, including a photoelectric conversion substrate provided with two main surfaces, and multiple first sensitivity sections and second sensitivity sections arranged in a prescribed direction. When sensitivity regions on the respective main surfaces of the multiple first sensitivity sections are defined as first sensitivity regions, and sensitivity regions that appear on the main surfaces of the second sensitivity sections are defined as second sensitivity regions, each of the first sensitivity regions receives at least a part of light incident on the main surfaces, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity regions in the irradiation region with respect to the first sensitivity regions other than those in the irradiation region and the second sensitivity regions is decreased.

Provided are a solar cell, a method for manufacturing a solar cell and a photovoltaic module. The solar cell includes a semiconductor substrate including a surface having a first texture structure and a first passivation layer located on the first texture structure of the semiconductor substrate. The first texture structure includes a pyramid-shaped microstructure, a length of a bevel edge of the pyramid-shaped microstructure is C μm, and 0.4≤C≤1.9. A non-uniformity of the first passivation layer is N≤4%, and N=(D.sub.max−D.sub.min)/D.sub.max. D.sub.max is a maximum thickness of the first passivation layer on the pyramid-shaped microstructure, and D.sub.min is a minimum thickness of the first passivation layer on the pyramid-shaped microstructure.

A solar cell includes a substrate having a front surface and a back surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface of the substrate and in a direction away from the substrate; where the first passivation layer includes a dielectric material; the second passivation layer includes a first Si.sub.uN.sub.v material, and a value of v/u is 1.3≤v/u≤1.7; and the third passivation layer includes a Si.sub.rO.sub.s material, and a value of s/r is 1.9≤s/r≤3.2; and a tunneling oxide layer and a doped conductive layer sequentially formed on the back surface of the substrate and in a direction away from the back surface; the doped conductive layer and the substrate are doped to have a same conductivity type.

Separation of individual strips from a solar cell workpiece, is accomplished by excluding a junction (e.g., a homojunction such as a p-n junction, or a heterojunction such as a p-i-n junction) from regions at which separation is expected to occur. According to some embodiments, the junction is excluded by physical removal of material from inter-strip regions of the workpiece. According to other embodiments, exclusion of the junction is achieved by changing an effective doping level (e.g., counter-doping, deactivation) at inter-strip regions. For still other embodiments, the junction is never formed at inter-strip regions in the first place (e.g., using masking during original dopant introduction). By imposing distance between the junction and defects arising from separation processes (e.g., backside crack propagation), losses attributable to electron-hole recombination at such defects are reduced, and collection efficiency of shingled modules is enhanced.

Embodiments of the present disclosure provide a photovoltaic cell, a method for manufacturing the photovoltaic cell, and a photovoltaic module. The photovoltaic cell includes a substrate, and an emitter and a first passivation structure that are located on a first surface of the substrate, where the emitter is located between the substrate and the first passivation structure; a first electrode, penetrating through the first passivation structure and being in contact with the emitter; and a first eutectic, located between the first electrode and the emitter, where the first eutectic includes a material of the first electrode and a material of the emitter, and a part of the first electrode penetrates through the first eutectic and is in contact with the emitter.

A solar cell, a manufacturing method therefor, and a photovoltaic module are provided. The solar cell includes a substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer, a first passivation layer and a second passivation layer. The first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer, the second passivation layer includes a third interface opposite to the second interface, a nitrogen content and a silicon content at the second interface are higher than those at the first interface and the third interface, respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface, respectively.

A passivated contact solar cell includes a silicon substrate and a back passivation assembly which includes a tunnel oxide layer, an N-type doped polysilicon film and a cover layer. The tunnel oxide layer is formed on the silicon substrate, the N-type doped polysilicon film is formed on the tunnel oxide layer by PECVD and has a thickness between 30 nm and 100 nm, the cover layer is formed on the N-type doped polysilicon film. The N-type doped polysilicon film formed by PECVD allows the tunnel oxide layer to retain fine passivation ability so as to enhance conversion efficiency of the passivated contact solar cell.

A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer Si.sub.uN.sub.v (1<u/v<4) disposed on a rear surface of the substrate. The at least one silicon nitride layer has a refractive index and a thickness in respective ranges of 1.9 to 2.5 and 50 nm to 100 nm. The second passivation layer includes at least one aluminum oxide layer Al.sub.xO.sub.y (0.8<y/x<1.6), a refractive index and a thickness of which are respectively in ranges of 1.4 to 1.6 and 4 nm to 20 nm. The PPW layer includes at least one silicon oxynitride layer Si.sub.rO.sub.sN.sub.t (r>s>t), a refractive index and a thickness of which are respectively in ranges of 1.5 to 1.8 and 1 nm to 30 nm.

Provided are a solar cell and a photovoltaic module. The solar cell includes: a silicon substrate; a passivation layer provided on a surface of the silicon substrate; a first electrode conductor at least partially arranged on the passivation layer and including a body portion and protruding portions located on two ends of the body portion; and a second electrode conductor at least partially arranged on the passivation layer and at least partially overlapping with the protruding portions. A length of each of the protruding portions in a width direction of the body portion is greater than a width of the body portion.

The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer. The preparation method involves making a plurality of partial slots, by means of a laser, from the lower surface of the rear side silicon nitride anti-reflection layer all the way to the bottom of the p-type silicon substrate, and printing a boron source slurry into the slot region to form a high-low junction structure. The high-low junction structure increases the open-circuit voltage of a rear side cell of the bifacial solar cell. The slot region heavily doped with the boron source slurry is in contact with the metal electrode to form an ohmic contact, which results in a decrease in series resistance and an increase in fill factor, and increases the bifaciality of the cell without decreasing efficiency on the front side.