A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride Si.sub.mN.sub.n material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiO.sub.iN.sub.j material, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

The present invention relates to a tandem solar cell which comprises: a perovskite solar cell comprising a perovskite absorption layer; a silicon solar cell placed under the perovskite solar cell; a junction layer placed between the perovskite solar cell and the silicon solar cell; an upper electrode placed on the perovskite solar cell; and a lower electrode placed under the silicon solar cell.

An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

The present disclosure relates to thin-film solar cells with improved efficiency and methods for producing thin-film solar cells having increased efficiency. In certain embodiments, thin-film solar cells having an efficiency of over 21%, over 20%, over 19%, over 15%, over 10%, etc. has been obtained using the methods of the disclosure. In certain aspects, the methods of the disclosure use passivation, passivating oxides, and/or doping treatments in increase the efficiency of the thin-film solar cells; e.g., CdTe-based thin-film solar cells.

A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x > y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m > n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈ [0.97, 7.58].

Disclosed are a solar cell cutting and passivation integrated processing method and a solar cell prepared using the method. The solar cell includes a substrate (1), a front electrode layer (2), a light absorption layer (3) and a back electrode layer (4) from bottom to top. Before laser structured cutting is performed for the back electrode layer (4), a protective layer (5) is disposed on a surface of the back electrode layer (4), and then laser structured cutting is performed for the back electrode layer (4), or the back electrode layer (4) and the light absorption layer (3) simultaneously through the protective layer (5) to obtain a corresponding structured trench (P3) while the protective layer (5) is kept from being cut by laser, and a material of the protective layer (5) is partially molten due to a localized high temperature generated by the laser processing in a laser structured cutting process and infiltrates into an underlying corresponding structured trench (P3). In this method, at the time of performing laser cutting processing, passivation is performed for newly-processed trench at the same time, reducing production costs, saving processing time. Further, the trench edges after cutting are repaired to improve the morphology of the processed trench, improving the stability of the cell and extending the service life of the cell.

A passivation process includes the successive steps of a) providing a stack having, in succession, a substrate based on crystalline silicon, a layer of silicon oxide, and at least one layer of transparent conductive oxide; and b) applying a hydrogen-containing plasma to the stack, step b) being executed at a suitable temperature so that hydrogen atoms of the hydrogen-containing plasma diffuse to the interface between the substrate and the layer of silicon oxide.

A PERC solar cell selective emitter includes a silicon wafer, first and second doped regions and a laser doped region with doped layers. First doped regions are located between the doped regions of each doped layer, and each second doped region is located between two adjacent doped layers. The PERC solar cell includes the selective emitter, a front anti-reflective layer on the surface of a front passivation layer, and a positive electrode. The positive electrode includes first silver paste layers on the surfaces of the laser doped regions and second silver paste layers on the surface of the front anti-reflective layer corresponding to the first doped regions. The second silver paste layers are in electrical contact with the first silver paste layers. Damage of laser to silicon wafers is reduced, compounding in silver paste areas is reduced, an open circuit voltage is increased, and battery efficiency is improved.

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.