A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x>y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈[0.97, 7.58].

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ternary carbide is formed on the rear side surface.

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.

A layer structure for a thin-film solar cell and production method are provided. The layer structure for the thin-film solar cell includes a photovoltaic absorber layer doped, at least in a region which borders a surface of the photovoltaic absorber layer, with at least one alkali metal. The layer structure has an oxidic passivating layer on the surface of the photovoltaic absorber layer, which is designed to protect the photovoltaic absorber layer from corrosion.

A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.

Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell efficiency by avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.

Embodiments of the present disclosure provide a solar cell and a manufacturing method thereof, a processing method of an n-type doped silicon film, and a semiconductor device. The manufacturing method of the solar cell includes: providing a silicon wafer; forming an n-type doped silicon film on a first main surface of the silicon wafer at a first temperature, and simultaneously forming the n-type doped silicon film on at least a portion of surfaces of the silicon wafer except the first main surface due to wrapping around; performing a heat treatment on the n-type doped silicon film at a second temperature; etching and removing the n-type doped silicon film on the surfaces of the silicon wafer except the first main surface after performing the heat treatment; and preparing the solar cell by using the silicon wafer, the first temperature is lower than the second temperature.

A process for manufacturing a bifacial photovoltaic cell, comprising the steps: coating a substrate with a boron containing layer; forming a cap layer over the boron containing layer which is on the second surface of the substrate; removing the boron containing layer from the surfaces of the substrate which are not covered with a cap layer; effecting the deposition of a phosphorous containing layer on the surfaces of the substrate which are not covered by the cap layer, and effecting diffusion of the phosphorous and the boron into the substrate; removing the phosphorous containing layer; texturing the substrate where there is no cap layer; effecting the deposition of a phosphorous containing layer on the first surface of the substrate and effecting diffusion of phosphorous into the substrate to form a second n-doped layer; and forming a passivating and/or antireflective coating layer covering the n-doped layer on the substrate's first surface.