The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconductor layer.

According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.

A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.

The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet resistance. Further, the transparent semiconducting films have a high light diffusion property, which is capable to be a translucent front/back electrode in a light-emitting device for improving the light emission efficiency and a front/intermediate/back electrode in a multi-junction solar cell for improving the light trapping effect. Related fabrication method and how they are applied in different fields are also provided in the present invention.

The present invention aims to provide etchants suitable for etching indium oxide-based films in which precipitation of oxalic acid is reduced even when moisture is evaporated and which provide excellent residue removal not only on organic films and SiN but also on glass. Also, the present invention aims to provide etchants that have a high solubility of indium to reduce precipitation of a salt of oxalic acid and indium, and therefore can be used for a long period of time. The present invention also aims to provide etchants that maintain a high etching rate. Included is an etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) a primary amine having two or more hydroxy groups and/or a polyhydric alcohol; and (C) water.

A back-contact cell with isolation grooves specifically disposed and a preparation method thereof. The back-contact cell includes: a silicon substrate having, on a back side, a polished region and a textured region disposed alternately along an X-axis direction of the back side, a first semiconductor layer disposed on the polished region, and a second semiconductor layer disposed on the textured region. The back-contact cell further includes a conductive film layer and a conductive mask layer sequentially disposed outwardly along a Z-axis direction of the back side. A conductive composite layer formed by the conductive mask layer and the conductive film layer is provided with isolation grooves disposed at intervals along the X-axis direction. The isolation groove is located above a contact interface between the first semiconductor layer and the second semiconductor layer in the Z-axis direction, and the isolation groove spans part of the polished region and part of the textured region in the X-axis direction.

A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

The present disclosure discloses an OGS capacitive touch screen and a manufacturing thereof. The OGS capacitive touch screen includes: a glass substrate; a first transparent electrically-conductive layer formed on the glass substrate and including a plurality of first touch electrodes arranged in a first direction; an overcoat layer formed on the first transparent electrically-conductive layer; a plurality of vias formed in the overcoat layer, the vias corresponding to lead wire positions reserved for the plurality of first touch electrodes; and a second transparent electrically-conductive layer formed on the overcoat layer and including a plurality of second touch electrodes arranged in a second direction.

A back-contact cell with isolation grooves specifically disposed and a preparation method thereof. The back-contact cell includes: a silicon substrate having, on a back side, a polished region and a textured region disposed alternately along an X-axis direction of the back side, a first semiconductor layer disposed on the polished region, and a second semiconductor layer disposed on the textured region. The back-contact cell further includes a conductive film layer and a conductive mask layer sequentially disposed outwardly along a Z-axis direction of the back side. A conductive composite layer formed by the conductive mask layer and the conductive film layer is provided with isolation grooves disposed at intervals along the X-axis direction. The isolation groove is located above a contact interface between the first semiconductor layer and the second semiconductor layer in the Z-axis direction, and the isolation groove spans part of the polished region and part of the textured region in the X-axis direction.

A touch panel and a method of fabricating the same are provided. The touch panel may include: a substrate; first sensing electrodes disposed on a first surface and arranged along a first direction and second sensing electrodes arranged along a second direction; at least one first connector connecting the first sensing electrodes in the first direction; a first insulating layer pattern disposed on the first connector; at least one second connector disposed on the first insulating layer pattern, intersecting the first connector, and connecting the second sensing electrodes in the second direction; and wires disposed on the first surface of the substrate in the peripheral area and electrically connected to the first sensing electrodes and the second sensing electrodes. The first connector includes a first light-transmitting conductive pattern disposed on the first surface of the substrate and a first light-blocking conductive pattern disposed on the first light-transmitting conductive pattern.