A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

Provided are a thin-film solar cell module structure and a method of manufacturing the same.

Provided is a solar cell and a method of fabricating the same. The solar cell according to an embodiment includes a supporting substrate; a transparent electrode layer on the supporting substrate; a buffer layer on the transparent electrode layer; a light absorption layer on the buffer layer; a backside electrode layer on the light absorption layer; and a plurality of recesses formed on a top surface of the transparent electrode layer and having a first slope and a second slope.

A method for manufacturing a display device includes forming a plurality of light blocking patterns on a first surface of a transparent substrate, wherein a first light blocking pattern of the plurality of light blocking patterns has a different line width than a second light blocking pattern of the plurality of light blocking patterns. An insulating layer is formed on the first surface of the transparent substrate and the light blocking patterns. A conductive layer is formed on the insulating layer. A photo-resist layer is formed on the conductive layer. The photo-resist layer is exposed with ultraviolet rays through a second surface of the transparent substrate, wherein the first and second surfaces of the transparent substrate are opposite to each other. The photo-resist layer is developed. The conductive layer is etched using the photo-resist layer as a mask. The photo-resist layer is removed.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet resistance. Further, the transparent semiconducting films have a high light diffusion property, which is capable to be a translucent front/back electrode in a light-emitting device for improving the light emission efficiency and a front/intermediate/back electrode in a multi-junction solar cell for improving the light trapping effect. Related fabrication method and how they are applied in different fields are also provided in the present invention.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

The light transmitting film includes a transparent substrate and a light transmitting inorganic layer in this order. The transparent substrate is composed of a polymer film. The light transmitting inorganic layer includes, in this order, a first inorganic oxide layer, a metal layer, and a second inorganic oxide layer. The light transmitting inorganic layer has conductivity, the first inorganic oxide layer and the second inorganic oxide layer contain hydrogen atoms. The ratio (H2/H1) of hydrogen atom content H2 of the second inorganic oxide layer relative to the hydrogen atom content H1 of the first inorganic oxide layer is 0.10 or more and 10.00 or less.

The present disclosure relates to a tandem solar cell, a tandem solar cell module comprising the tandem solar cell, and a method for manufacturing the same. More specifically, the present disclosure relates to a monolithic tandem solar cell comprising a perovskite solar cell laminated on a front surface of a crystalline silicon solar cell, and a method for manufacturing the same.

According to the present disclosure, a Nano-electrode structure can be patterned on a front surface of a front transparent electrode of a solar cell in which a crystalline silicon solar cell and a perovskite solar cell are bonded via a junction layer, such that the optical path of the sunlight incident on the solar cell through the Nano-electrode structure can be increased to improve the utilization rate of the light.

The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.