A thin-film photovoltaic cell series structure is disposed on a display surface side of a display module and includes a transparent substrate, as well as a first single-junction cell and a second single-junction cell which are disposed on the transparent substrate and connected in series. The first single-junction cell includes a first front electrode, a first photovoltaic layer, and a first back electrode which are sequentially laminated and disposed on the transparent substrate, the second single-junction cell includes a second front electrode, a second photovoltaic layer, and a second back electrode which are sequentially laminated and disposed on the transparent substrate, and the first front electrode and the second back electrode are electrically connected through a metal auxiliary electrode to realize series connection of the first single-junction cell and the second single-junction cell.

Provided is a solar cell and a method for manufacturing the same, the method includes: forming a doped layer on a surface of a semiconductor substrate, the doped layer having a first doping concentration of a doping element in the doped layer; depositing, on a surface of the doped layer, a doped amorphous silicon layer including the doping element; selectively removing at least one region of the doped amorphous silicon layer; performing annealing treatment, for the semiconductor substrate to form a lightly doped region having the first doping concentration and a heavily doped region having a second doping concentration in the doped layer, the second doping concentration is greater than the first doping concentration; and forming a solar cell by post-processing the annealed semiconductor substrate. The solar cell and the method for manufacturing the same simplify the manufacturing process and improve conversion efficiency of the solar cell.

A solar cell includes a crystal substrate which has a major surface on a light reception side provided with a first texture surface and a major surface on a non-light reception side provided with a second texture surface. The second texture surface occupies 20% or more of the area of the major surface on the non-light reception side.

The present disclosure provides an array substrate and a method for manufacturing an array substrate. The array substrate includes a substrate, a switch assembly disposed on the substrate and correspondingly disposed beside the switch assembly, a color photoresist layer formed on the switch assembly and the photosensor, and a pixel electrode formed on the color photoresist layers and coupled with the switch assembly. The switch assembly includes a first metal layer. The photosensor includes a first electrode layer formed directly on the substrate and a first amorphous silicon layer disposed above the first electrode layer. The first electrode layer and the first metal layer are disposed on a same layer.

There is provided a transparent semiconductor substrate and a method for manufacturing same includes a semiconductor substrate including a first surface and a second surface opposite to the first surface; and a through-hole penetrating the semiconductor substrate, wherein the through-hole includes an inclined portion inclined with respect to the first surface and second surface.

The present disclosure provides an array substrate and a method for manufacturing an array substrate. The array substrate includes a substrate, a switch assembly disposed on the substrate and correspondingly disposed beside the switch assembly, a color photoresist layer formed on the switch assembly and the photosensor, and a pixel electrode formed on the color photoresist layers and coupled with the switch assembly. The switch assembly includes a first metal layer. The photosensor includes a first electrode layer formed directly on the substrate and a first amorphous silicon layer disposed above the first electrode layer. The first electrode layer and the first metal layer are disposed on a same layer.

A method for manufacturing a crystalline silicon-based solar cell includes performing a plasma treatment on a plurality of conductive single-crystalline silicon substrates in a chemical vapor deposition (CVD) chamber, each of the conductive single-crystalline silicon substrates having an intrinsic silicon-based layer on a first principal surface thereof. The first principal surface of the conductive single-crystalline silicon substrate may have a pyramidal texture that comprises a plurality of projections having a top portion, a middle portion, and a valley portion. The plasma treatment may include introducing a hydrogen gas and a silicon-containing gas into the CVD chamber and exposing a surface of the intrinsic silicon-based layer to hydrogen plasma. An amount of the hydrogen gas introduced into the CVD chamber during the plasma treatment may be 150 to 2500 times an amount of the silicon-containing gas introduced into the CVD chamber.

A diode and its fabrication method are provided. The diode includes a substrate, a buffer layer on a side of the substrate, a first film layer, a second film layer and a third film layer. The first film layer is a polycrystalline silicon film layer; the second film layer is an amorphous silicon film layer; and the third film layer is one of the polycrystalline silicon film layer and the amorphous silicon film layer. The diode at least includes a first portion, a second portion, a third portion, a first electrode, and a second electrode. The first portion is located in the first film layer; the second portion is located in the second film layer; and the third portion is located in the third film layer. The first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion.

A solar cell includes: a silicon substrate including a texture structure in a first principal surface; and a first non-crystalline silicon layer formed on the first principal surface of the silicon substrate and including recesses and protrusions reflecting the texture structure. At a valley portion in the recesses and protrusions, the first non-crystalline silicon layer includes, in the stated order: a first epitaxial layer including a crystalline region epitaxially grown on the silicon substrate; a first amorphous layer which is a non-crystalline silicon layer; and a second amorphous layer which is a non-crystalline silicon layer. The density of the first amorphous layer is less than the density of the second amorphous layer.

In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.