An LED may include a third contact, for example to increase speed of operation of the LED. The LED with the third contact may be used in an optical communication system, for example a chip-to-chip optical interconnect.

A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

A semiconductor light emitting element can include an n-type semiconductor layer, a p-type semiconductor layer in a first region on the n-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, an n-type electrode in a second region different from the first region on the n-type semiconductor layer, a magnetic layer under the n-type semiconductor layer, a reflective layer between the n-type semiconductor layer and the magnetic layer, and a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.

A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures with electrical overstress protection are disclosed. LED chip structures are disclosed that include built-in electrical overstress protection. An exemplary LED chip may include an active LED structure that is arranged as a primary light-emitting structure and a separate active LED structure that is arranged as an electrical overstress protection structure. The electrical overstress protection structure may be electrically connected in reverse relative to the primary light-emitting structure. In this manner, under normal operating conditions, forward current will flow through the primary light-emitting structure to generate desired light emissions, and during an electrical overstress event, reverse current may flow through the electrical overstress protection structure, thereby protecting the light-emitting structure from damage.

This document describes a device that is monolithic and capable of emitting quantum light without using previous configurations known in the art that require certain elements which yield certain disadvantages, which may be solved by implementing the device of the invention described herein. In this way the use of a transmitter which controls the state of charge or the wavelength of quantum light emitters independently of current in the device is implemented and does function properly when quantum light emitters are embedded in photonic structures, like microcavities or photonic crystals (PC); this is achieved by stacking semiconductor layers with different composition and doping types. A quantum light emitter circuit, which is a quantum optical circuit comprising at least two of said devices, is also an as aspect of the invention disclosed herein.

A light emitting diode having multiple tunnel junctions is provided. This comprises the common contact layer, the first and second tunnel junction layers respectively disposed on the bottom surface and the upper surface of the common contact layer, the first light emitting structure disposed on the bottom surface of the first tunnel junction layer and the second light emitting structure disposed on the upper surface of the second tunnel junction layer. Light emitting structures emitting blue and green light may be disposed above and below the common contact layer. By injecting holes into the first light emitting structure and the second light emitting structure through the common contact layer formed of the n-type semiconductor, current spreading effect is improved, leading to improved light emitting efficiency. Since the n-type semiconductor layer can be disposed on the upper surface exposed to the outside, risk of damage occurring in subsequent fabrication steps can be reduced.

A LED structure includes a substrate, a bonding layer, a first doping type semiconductor layer, a multiple quantum well (MQW) layer, a second doping type semiconductor layer, a passivation layer and an electrode layer. The bonding layer is formed on the substrate, and the first doping type semiconductor layer is formed on the bonding layer. The MQW layer is formed on the first doping type semiconductor layer, and the second doping type semiconductor layer is formed on the MQW layer. The second doping type semiconductor layer includes an isolation material made through implantation, and the passivation layer is formed on the second doping type semiconductor layer. The electrode layer is formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer.

An optoelectronic semiconductor component is specified which comprises a semiconductor layer sequence having a first and a second semiconductor layer of a first conductivity type, an active layer designed for generating electromagnetic radiation, a first electrical terminal layer and a second electrical terminal layer laterally spaced therefrom which electrically contacts the second semiconductor layer, and a first contact zone of a second conductivity type which adjoins the first electrical terminal layer and is electrically conductively connected to the first electrical terminal layer. And at least one functional region formed between the first and second terminal layers, in which a second contact zone of a second conductivity type and at least one shielding zone of a second conductivity type is formed. Furthermore, a method for producing the optoelectronic semiconductor component is specified.

A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction. The second side surface is curved so as to be convex downward.