Various forms of Mg.sub.xGe.sub.1?xO.sub.2?x are disclosed, where an epitaxial layer comprises single crystal Mg.sub.xGe.sub.1?xO.sub.2?x, with x having a value of 0?x<1, wherein the single crystal Mg.sub.xGe.sub.1?xO.sub.2?x has a crystal symmetry compatible with a substrate or with an underlying layer on which the single crystal Mg.sub.xGe.sub.1?xO.sub.2?x is grown. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1?xO.sub.2?x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90 C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25 C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300 C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed.

Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac).sub.2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

Disclosed is a device which includes first and second major substrate surfaces. The first substrate surface includes an LED with first and second terminals while the second substrate surface includes CMOS circuit components. The CMOS components and LED are coupled by through silicon via (TSV) contacts which extend through the second substrate surface.

A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90 C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25 C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300 C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed.

Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac).sub.2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 C. Products including quantum dots described herein are also disclosed.

Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell constituted of ZnS, and an alloy configured between the core and the shell. The core is wrapped by the shell. The alloy constituted of Cd, Se, Zn and S, wherein a content of the Cd and Se gradually decreases from the core to the shell and a content of the Zn and S gradually increases from the core to the shell. A particle size of each of the gigantic quantum dots is equal to or more than 10 nm.