A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 C. Products including quantum dots described herein are also disclosed.

Disclosed is a device which includes first and second major substrate surfaces. The first substrate surface includes an LED with first and second terminals while the second substrate surface includes CMOS circuit components. The CMOS components and LED are coupled by through silicon via (TSV) contacts which extend through the second substrate surface.

A quantum dot for emitting light under electrical stimulation has a center of a first composition and a surface of a second composition. The second composition is different than the first composition. An intermediate region extends between the center and surface and has a continuous composition gradient between the center and the surface. The quantum dot is synthesized in one pot method by controlling the rate and extent of a reaction by controlling the following parameters: (i) type and quantity of reactant, (ii) reaction time, and (iii) reaction temperature.

Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

Disclosed is a multi-color semiconductor LED display with integrated with CMOS circuit components, such as thin film transistors (TFTs). LEDs of the display are disposed on a first major surface of a substrate while CMOS circuit components which are configured as circuitry for operating the display are disposed on a second opposing major surface of the substrate. The CMOS components and LEDs are coupled by through silicon via (TSV) contacts through the substrate. Integrating CMOS components with LED on one substrate enhances compactness of the display. Other advantages include low power and low cost with high brightness and resolution desired for portable applications, including virtual reality and augmented reality applications.

A quantum dot for emitting light under electrical stimulation has a center of a first composition and a surface of a second composition. The second composition is different than the first composition. An intermediate region extends between the center and surface and has a continuous composition gradient between the center and the surface. The quantum dot is synthesized in a one pot method by controlling the rate and extent of a reaction by controlling the following parameters: (i) type and quantity of reactant, (ii) reaction time, and (iii) reaction temperature.

A semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. The present invention further relates to compositions and devices including semiconductor nanocrystals capable of emitting light with an improved photoluminescence quantum efficiency. A semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm is disclosed. Also disclosed are a device, a population of semiconductor nanocrystals, and a composition including a semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm. A semiconductor nanocrystal that is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 90%. Also disclosed are a device, a population, and a composition including a semiconductor nanocrystal.