In an embodiment a method includes providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate, arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer, detaching the growth substrate by laser radiation, wherein the laser radiation is absorbed in the separation layer, arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprise a second detachment layer, detaching the first auxiliary carrier by laser radiation, wherein the laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching and mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier.

A quantum dot ink, a method of manufacturing a display panel, and the display panel are provided. The quantum dot ink includes an organic solvent and quantum dots dispersed in the organic solvent. The quantum dots include luminescent quantum dots and blocking quantum dots. Dispersion effect of the quantum dot ink during inkjet printing is inhibited by adding the blocking quantum dots into the quantum do ink. This can prevent a coffee ring effect, and enhance smoothness and uniformity of a quantum dot film surface, thereby allowing the display panel to exhibit excellent display quality.

An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.

Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

An electrode substrate for a transparent light emitting device display containing a transparent substrate; a wire electrode unit, which is provided on the transparent substrate and comprises a metal mesh pattern; and at least one light emitting device mounting unit provided on the transparent substrate, in which both an upper surface and a lateral surface of the metal mesh pattern of the wire electrode unit comprise a darkening layer pattern, and both an upper surface and a lateral surface of the light emitting device mounting unit do not comprise a darkening layer pattern.

Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

A method of manufacturing a III-V based optoelectronic device on a silicon-on-insulator wafer. The silicon-on-insulator wafer comprises a silicon device layer, a substrate, and an insulator layer between the substrate and silicon device layer. The method includes the steps of: providing a device coupon, the device coupon being formed of a plurality of III-V based layers; providing the silicon-on-insulator wafer, the wafer including a cavity with a bonding region; transfer printing the device coupon into the cavity, and bonding a layer of the device coupon to the bonding region, such that a channel is left around one or more lateral sides of the device coupon; filling the channel with a bridge-waveguide material; and performing one or more etching steps on the device coupon, silicon-on-insulator wafer, and/or channel.

Provided are an infrared LED element with an emission wavelength of 1000 nm or more, which has improved emission efficiency by enhancing uniformity of light emission in a surface direction.

The infrared LED element includes: a support substrate; a reflection layer formed on top of the support substrate; an insulating layer formed on top of the reflection layer; a contact layer formed on top of the insulating layer, the contact layer being made of Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y (0≤x<0.33, 0≤y<0.70) of a first conduction type; a first cladding layer of the first conduction type, the first cladding layer being formed on top of the contact layer; an active layer formed on top of the first cladding layer; a second cladding layer of a second conduction type being formed on top of the active layer; a first electrode formed at each of a plurality of places in the insulating layer by passing through the insulating layer in a first direction orthogonal to a main surface of the support substrate, the first electrode connecting the contact layer to the reflection layer; and a second electrode formed on top of the second cladding layer.

The present invention relates to a multi-sided light-emitting circuit board, which includes: a transparent substrate layer and a first conductive circuit layer on at least one surface of the transparent substrate layer. The first conductive circuit layer includes conductive portions arranged at intervals. A metal piece is formed on a surface of each conductive portion away from the transparent substrate layer. An accommodation space is formed between adjacent metal pieces. The accommodation space is provided with a light-emitting chip. Each light-emitting chip includes two electrodes. The two electrodes are respectively located at opposite ends of the light-emitting chip. The electrodes are respectively electrically connected to adjacent metal pieces. An encapsulant layer is formed on a surface of the first conductive circuit layer. The encapsulant layer covers and encapsulates the metal pieces and the light-emitting chips. The invention also relates to a method for manufacturing a multi-faceted light-emitting circuit board.

A display device includes a bank disposed on a substrate, the bank surrounding at least a portion of each of a first emission area and a second emission area in a plan view; first alignment electrodes, at least a number of the first alignment electrodes being disposed in the first emission area; second alignment electrodes, at least a number of the second alignment electrodes being disposed in the second emission area; and a light emitting element disposed in each of the first emission area and the second emission area. An electrode most adjacent to the second emission area among the first alignment electrodes and an electrode most adjacent to the first emission area among the second alignment electrodes are spaced apart from each other with a dividing line disposed therebetween, and the dividing line overlaps the bank in a plan view.