A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.

An optoelectronic device includes a substrate, at least one first light-emitting diode and at least one second light-emitting diode, each first light-emitting diode having a first primary doped semiconductor portion, a first secondary active semiconductor portion, and a first tertiary doped semiconductor portion. Each second light-emitting diode includes a second primary doped semiconductor portion, a second secondary active semiconductor portion, and a second tertiary doped semiconductor portion. A first external lateral portion is configured to allow the first atomic species to diffuse until the first secondary active semiconductor portion reaches an atomic concentration of indium between 13% and 20%. A second external lateral portion is configured to allow the first atomic species to diffuse until the second secondary active semiconductor portion reaches an atomic concentration of indium between 20% and 40%.

A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

The present application provides a light emitting device, a method for making the same and a display apparatus. The light emitting device includes: a driving backplane; at least one set of driving electrodes disposed on the driving backplane, each set of driving electrodes including a first driving electrode and a second driving electrode; an epitaxial layer located on a side of the at least one set of driving electrodes away from the driving backplane; and at least one set of metal electrodes located on a side of the epitaxial layer close to the driving backplane, each set of metal electrodes including a first metal electrode and a second metal electrode, the first metal electrode and the second metal electrode being respectively connected to a first driving electrode and a second driving electrode, and a filling material being disposed between the first metal electrode and the second metal electrode.

A display panel including an LED device and a method including: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide light-emitting regions by each of the plurality of LEDs, wherein the forming the plurality of LEDs includes: etching a growth substrate to form a plurality of LEDs and forming a plurality of protrusions and a plurality of depressions on the growth substrate; and forming a reflector layer on a surface of the plurality of protrusions and a surface of the plurality of depressions, and wherein the forming the plurality of partition walls includes removing a part of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and a space between the plurality of partition walls is formed based on the plurality of depressions.

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

A method of manufacturing a semiconductor light emitting element includes: forming an active layer made of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer made of an n-type AlGaN-based semiconductor material; removing a portion of each of the active layer and the n-type clad layer by dry etching to expose a portion of the n-type clad layer; forming a first metal layer including titanium (Ti) on an exposed surface of the n-type clad layer; forming a second metal layer including aluminum (Al) on the first metal layer; and forming an n-side electrode by annealing the first metal layer and the second metal layer at a temperature not lower than 560° C. and not higher than 650° C. A film density of the second metal layer before the annealing is lower than 2.7 g/cm.sup.3.

The present invention discloses a bidirectional ultraviolet light emitting diode (UV LED) based on N—ZnO/N—GaN/N—ZnO heterojunction as well as its preparation method. The LED includes: N—ZnO microwires, a N—GaN film, a PMMA protective layer and alloy electrodes; and its preparation method includes the following steps: lay two N—ZnO microwires on the N—GaN film, then spin-coat a PMMA protective layer on the film to fix the N—ZnO microwires until the PMMA protective layer spreads over the N—ZnO microwires, and then place the film on a drying table to solidify the PMMA protective layer; then etch the PMMA protective layer with O.sub.2 to expose the N—ZnO microwires, and prepare alloy electrodes on different N—ZnO microwires to construct a N—ZnO/N—GaN/N—ZnO heterojunction to constitute a complete device. The present invention constructs an N/N/N symmetrical structure; the device is composed of N—ZnO and N—GaN, emits light in the ultraviolet region and has a small turn-on voltage.

A 1.8-times improved light extraction efficiency (LEE) is reported under DC test conditions for truncated cone AlGaN DUV micropixel LEDs when the pixel size was reduced from 90 to 5 .Math.m. This is shown to be a direct consequence of the absorption of the TM-polarized photons travelling in a direction parallel to the device epitaxial layers. Presently disclosed cathodoluminescence measurements show the lateral absorption length for 275 nm DUV photons to be 15 .Math.m, which is ~1000 times shorter than that for waveguiding in the A.sub.0.65Ga.sub.0.35N cladding layers. Results show the re-absorption of this laterally travelling emission by the multiple quantum wells and the p-contact GaN layer to be a key factor limiting the LEE. Hence, for DUV emitters, scaling down to sub-20 .Math.m device dimensions is critical for maximizing LEE. Presently disclosed sub-20 .Math.m AIGaN-based LEDs do not show pronounced edge recombination effects. The peak light output power was further increased for all the devices after the addition of a semi -reflective Al.sub.2O.sub.3/Al heat spreader despite the reduction in sidewall reflectivity.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.