The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

An optoelectronic component includes an optoelectronic semiconductor chip including first and second electrical contacts, a first leadframe section including a first chip contact pad and a first soldering contact pad situated opposite the first chip contact pad, and a second leadframe section including a second chip contact pad and a second soldering contact pad situated opposite the second chip contact pad, wherein the first electrical contact electrically conductively connects to the first chip contact pad and the second electrical contact electrically conductively connects to the second chip contact pad, the first and second leadframe sections are embedded into a housing such that at least parts of the first and second soldering contact pads are accessible at an underside, and a solder stop element is arranged at the underside of the housing, the solder stop element extending between the first soldering contact pad and the second soldering contact pad.

Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

An optical device comprising: a quantum dot, said quantum dot comprising InAs and adapted to emit radiation in the wavelength range from 1200 nm to 2000 nm; a supporting layer supporting said quantum dot, said supporting layer being lattice matched to InP; and wherein the longest dimension of the base of the quantum dot provided parallel to the supporting layer is within 20% of the shortest dimension of the base provided parallel to the supporting layer.

A semiconductor element package includes: a semiconductor element arranged above a first substrate; first and second electrodes arranged above the first substrate and electrically connected to the semiconductor element; a housing which is arranged above the first substrate and arranged around the semiconductor element, and which has a stepped portion in the upper area thereof; a diffusion part arranged on the stepped portion of the housing and arranged above the semiconductor element; and a plurality of via holes penetrating the first substrate and the housing.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

The invention relates to an arrangement for a spatially resolved and wavelength-resolved detection of light radiation emitted from at least one OLED or LED. A multilayer system is arranged between an electrode, an OLED or an LED, and a substrate and is formed using layers formed alternately above one another from a material having higher and lower optical refractive indices n. In this respect, light radiation from the at least one OLED or LED and having a plurality of different wavelengths λ1, λ2, λ3, . . . λn thus exits the multilayer system. Light radiation that exits at different wavelengths λ1, λ2, λ3, . . . λn at different angles is incident onto at least one detector array after at least a simple refraction at an optical element or after reflection at a layer or at a layer system of a sensor such that light radiation at a wavelength λ1, λ2, λ3, . . . or λn is incident onto a respective detector element of the detector array. The detector elements of the detector array are arranged discretely from one another.

A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device.

A light emitting component includes plural transfer elements, plural setting thyristors, and plural light emitting elements. The transfer elements are configured to be sequentially brought into an ON state. The setting thyristors are connected to the transfer elements, respectively. The setting thyristors are configured to be brought into a state where the setting thyristors are capable of changing to the ON state when the transfer elements are brought into the ON state. The light emitting elements are stacked on the setting thyristors through tunnel junctions, respectively. The light emitting elements are configured to emit light of increase a light emission amount when the setting thyristors are brought into the ON state.