A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and an active layer that includes AlGaN and is located on the n-type cladding layer. Si concentration distribution in a direction of stacking the n-type cladding layer and the active layer has a local peak in the active layer.

The point source light-emitting diode includes a substrate; an n-type cladding layer; a light emitting layer; a p-type cladding layer; an n-type current confinement layer; a p-type contact layer provided on the n-type current confinement layer; and a p-type electrode having a light emission window concentric with the opening. The window opening width of the light emission window is equal to or larger than an opening width of the opening. The point source light-emitting diode has a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer in the thickness direction. The light emitting layer has a non-implanted region that has a region width larger than the opening width of the light emission window and is concentric with the light emission window, and a hydrogen ion implanted region enclosing the non-implanted region.

A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.

A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.

A nitride-based light emitting diode (LED) includes a substrate, and an epitaxial structure. The epitaxial structure includes an n-type nitride-based semiconductor layer, a light emitting element, a first electron blocking layer, a p-type carbon-containing modulation layer and a p-type nitride-based semiconductor layer that are sequentially disposed on the substrate in such order. An amount of carbon present in the p-type carbon-containing modulation layer is higher than an amount of carbon present in each of the light emitting element and the first electron blocking layer.

The present invention relates to an LED structure, more particularly, to an LED structure and an ink for inkjet and light source including the same.

A method for growing an electron-blocking layer, an epitaxial layer, and an LED chip are provided in the present disclosure. The epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and an electron-blocking layer. The electron-blocking layer is disposed between the active layer and the P-type semiconductor layer, and the N-type semiconductor layer is disposed on one side of the active layer away from the electron-blocking layer. The electron-blocking layer includes a proximal aluminum barrier layer close to the active layer, a distal aluminum barrier layer close to the P-type semiconductor layer, and an indium well layer disposed between the proximal aluminum barrier layer and the distal aluminum barrier layer. The content of aluminum component in the distal aluminum barrier layer is lower than the content of aluminum component in the proximal aluminum barrier layer.

A light emitting element includes a light emitting element core including a first area and a second area surrounding the first area. The light emitting element core includes a first semiconductor layer doped with a first dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a second dopant, an element active layer disposed between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer disposed between the element active layer and the second semiconductor layer and doped with the second dopant. The second area of the light emitting element core is located on an outer circumference of the light emitting element core and includes an outer surface of the light emitting element core. A doping concentration of the second dopant of the third semiconductor layer is lower than a defect density of the second area of the light emitting element core.

A light emitting element includes, successively from a lower side to an upper side, a first light emitting part having a first active layer, a tunnel junction part, and a second light emitting part having a second active layer. The first active layer includes a plurality of first well layers, and a first barrier layer positioned between two adjacent first well layers among the first well layers. The second active layer includes a plurality of second well layers, and a second barrier layer positioned between two adjacent second well layers among the second well layers. The second barrier layer is a nitride semiconductor layer containing an n-type impurity and gallium, and has an n-type impurity concentration higher than that of the first barrier layer. An n-type impurity concentration peak in the second barrier layer is located on a first light emitting part side.

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension less than 5 um along a horizontal direction of the micro-LED, and a contact formed on a non-horizontal face of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs), and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that, when the micro-LED is driven at an effective current density less than 50 A/cm2, holes are injected from the contact to the plurality of QWs through the p-type semiconductor layer. The injected holes diffuse laterally in the plurality of QWs over a distance greater than 1 micrometer (μm).