A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. At least one of the p-type semiconductor layer and the electron blocking layer includes an oxygen-containing portion including oxygen. An oxygen concentration at each position of the oxygen-containing portion in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not less than 2.5×10.sup.16 atoms/cm.sup.3.

A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).

An epitaxial structure, a preparation method thereof, and a light-emitting diode (LED) are provided. The epitaxial structure includes a sapphire substrate, a GaN layer, a defect exposure layer, and a defect termination layer stacked in sequence.

A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.

A micro light emitting diode (LED) includes: a current spreading layer including a light-emitting surface; a first electrode disposed on the light-emitting surface of the current spreading layer and electrically connected to the current spreading layer; a first cladding layer and a second cladding layer that are stacked on the current spreading layer; an active layer disposed between the first cladding layer and the second cladding layer; a second electrode; and a current guiding part disposed between the second electrode and the second cladding layer, and positioned in a central part of the second cladding layer, the current guiding part being and configured to guide a current to flow away from a side surface of the micro LED.

An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

A light-emitting device includes a semiconductor structure, a through hole, an electrical connecting structure, and a first electrode metal layer. The semiconductor structure has a first surface and a second surface, and includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer. The first surface is located on the first-type semiconductor layer, and the second surface is located on the second-type semiconductor layer. The through hole passes through the first-type semiconductor layer, the second-type semiconductor layer, and the active layer. The through hole has a first section, and the first-type semiconductor layer is exposed through the first section to electrically connect with the electrical connecting structure. A first angle between a side wall of the first type semiconductor layer that bounds the first section and the plane of the first surface ranges from 0° to 90°.

A display device includes pixel electrodes spaced apart from one another on a substrate; light-emitting elements disposed on the pixel electrodes; a common electrode layer disposed on the light-emitting elements; and an undoped semiconductor layer disposed on the common electrode layer. The display device includes nanostructures disposed in the common electrode layer and spaced apart from one another, and the common electrode layer includes a first common electrode layer disposed between the undoped semiconductor layer and the nanostructures, and a second common electrode layer disposed between adjacent nanostructures and disposed between the light-emitting elements and the nanostructures.

Embodiments of the disclosure provide a backlight module using MJT LEDs and a backlight unit including the same. More specifically, embodiments of the disclosure provide a backlight module, which includes MJT LEDs configured to increase an effective light emitting area of each of light emitting cells and optical members capable of uniformly dispersing light emitted from the MJT LEDs. In addition, embodiments of the disclosure provide a backlight unit using the backlight module, thereby reducing the number of LEDs constituting the backlight unit while allowing operation at low current.

A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the first aluminum-containing layer and the active region, wherein the confinement layer includes a thickness smaller than the thickness of one of the barrier layers; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region.