An optoelectronic device includes a substrate, at least one first light-emitting diode and at least one second light-emitting diode, each first light-emitting diode having a first primary doped semiconductor portion, a first secondary active semiconductor portion, and a first tertiary doped semiconductor portion. Each second light-emitting diode includes a second primary doped semiconductor portion, a second secondary active semiconductor portion, and a second tertiary doped semiconductor portion. A first external lateral portion is configured to allow the first atomic species to diffuse until the first secondary active semiconductor portion reaches an atomic concentration of indium between 13% and 20%. A second external lateral portion is configured to allow the first atomic species to diffuse until the second secondary active semiconductor portion reaches an atomic concentration of indium between 20% and 40%.

GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a light emitting element on the substrate and having a first end and a second end, a third electrode disposed on the light emitting element, and electrically connecting the first electrode with the first end of the light emitting element, an insulating pattern disposed on the third electrode and exposing the second end of the light emitting element, and a fourth electrode on the substrate, and electrically connecting the second electrode with the second end of the light emitting element. A void may be formed between the light emitting element and the insulating pattern.

A full color display includes multiple pixels and has a white point, a direction of emission and a solid angle of emission around the direction of emission characterized by a half-cone angle θ. Each pixel includes: a sub-pixel including a red LED having a first geometry emitting red light into a range of emission angles, such that a fraction of the power emitted within the solid angle of emission is at least 1.2*(1−cos(θ).sup.2); a sub-pixel including a green LED having a second geometry emitting green light into a range of emission angles, such that a fraction of the power emitted within the solid angle of emission is at least 1.2*(1−cos(θ).sup.2); and a sub-pixel including a blue LED emitting blue light into a range of emission angles, such that a fraction of the power emitted within the solid angle of emission is at least 1.2*(1−cos(θ).sup.2). The LEDs are configured such that, in any direction within the solid angle of emission, white light emitted by the display has a chromaticity difference Du′v′ from the white point of the display which is less than 0.01.

An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

A device configured for a treatment with a laser, including a support transparent for the laser and at least one optoelectronic circuit including at least one optoelectronic component having a three-dimensional semiconductor element covered with an active layer, the three-dimensional semiconductor element including a base bonded to the support, the device including a region absorbing for the laser resting on the support and surrounding the base.

A device configured for a treatment with a laser, including a support transparent for the laser and at least one optoelectronic circuit including at least one optoelectronic component having a three-dimensional semiconductor element covered with an active layer, the three-dimensional semiconductor element including a base bonded to the support, the device including a region absorbing for the laser resting on the support and surrounding the base.

There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.