A micro light-emitting diode (μLED) chip includes a first electrode layer, a second semiconductor layer located on a surface of the first electrode layer, and a first semiconductor layer located on a side of the second semiconductor layer away from the first electrode layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer. The second semiconductor is electrically connected to the first electrode layer, and is configured to transmit first carriers. The first semiconductor layer is configured to transmit second carriers. The light-emitting layer is configured to be excited to emit light upon combination of the first carriers and the second carriers. A surface of the first semiconductor layer away from the light-emitting layer is a concave-convex microstructure, and convex portions of the concave-convex microstructure are configured to receive an electron beam.

A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.

A micro light-emitting diode (LED) includes an epitaxial layered structure including a support layer, a first-type semiconductor element, an active layer, and a second-type semiconductor element that are sequentially disposed on one another in such order. The micro LED is substrate-free, and the support layer has a thickness equal to or greater than 500 nm. A micro LED array is also disclosed.

A micro light-emitting diode (LED) includes an epitaxial layered structure including a support layer, a first-type semiconductor element, an active layer, and a second-type semiconductor element that are sequentially disposed on one another in such order. The micro LED is substrate-free, and the support layer has a thickness equal to or greater than 500 nm. A micro LED array is also disclosed.

A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern.

A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern.

A display device includes a light emitting element, an adhesive barrier wall and an array substrate. The light emitting element includes a first contact and a second contact disposed on a first surface of the light emitting element. The adhesive barrier wall is disposed on the first surface of the light emitting element and includes a first portion between the first contact and the second contact. The array substrate includes a first pad and a second pad disposed on a second surface of the array substrate. The first contact and the second contact of the light emitting element are respectively connected to the first pad and the second pad.

A micro light-emitting device includes an epitaxial structure. The epitaxial structure has a bottom surface and includes a plurality of grooves, and the grooves are located on the bottom surface. Each of the grooves includes a plurality of sub-grooves, and the sub-grooves define an inner wall of each of the grooves. A ratio of a size of each of the grooves to a size of each of the sub-grooves is greater than 1 and less than or equal to 4000.

A micro light-emitting device includes an epitaxial structure. The epitaxial structure has a bottom surface and includes a plurality of grooves, and the grooves are located on the bottom surface. Each of the grooves includes a plurality of sub-grooves, and the sub-grooves define an inner wall of each of the grooves. A ratio of a size of each of the grooves to a size of each of the sub-grooves is greater than 1 and less than or equal to 4000.

An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.