A device includes a substrate, and a plurality of structures supported by the substrate, each structure of the plurality of structures including a Group III-nitride base, first and second Group III-nitride charge carrier injection layers supported by the Group III-nitride base, and a quantum heterostmcture disposed between the first and second charge carrier injection layers. The quantum hetero structure includes a pair of Group III-nitride barrier layers, and a Group III-nitride active layer disposed between the pair of Group III-nitride barrier layers. The Group III-nitride active layer has a thickness for quantum confinement of charge carriers. At least one of the pair of Group III-nitride barrier layers has a nitride surface adjacent to the Group III-nitride active layer.

A display device includes a pixel, the pixel includes at least one light emitting element including a first end and a second end; a first electrode overlapping the at least one light emitting element and electrically connected to the first end of the at least one light emitting element; and a second electrode overlapping the at least one light emitting element and the first electrode and electrically connected to the second end of the at least one light emitting element, and the first electrode includes area electrodes divided according to a number and a position of area electrodes overlapping the at least one light emitting element.

A display device includes a first electrode and a second electrode spaced apart from and parallel to each other and disposed on a substrate, each of the first electrode and the second electrode extends in a direction, a first insulating layer disposed on the first electrode and the second electrode, a light-emitting element disposed on the first insulating layer and having opposing ends respectively disposed on the first electrode and the second electrode, a first connection electrode electrically contacting an end of the light-emitting element, a second connection electrode electrically contacting an opposite end of the light-emitting element, and insulating patterns respectively disposed on and contacting the first connection electrode and the second connection electrode, the insulating patterns are spaced apart from the light-emitting element and the first insulating layer.

A display device includes a first electrode and a second electrode spaced apart from and parallel to each other and disposed on a substrate, each of the first electrode and the second electrode extends in a direction, a first insulating layer disposed on the first electrode and the second electrode, a light-emitting element disposed on the first insulating layer and having opposing ends respectively disposed on the first electrode and the second electrode, a first connection electrode electrically contacting an end of the light-emitting element, a second connection electrode electrically contacting an opposite end of the light-emitting element, and insulating patterns respectively disposed on and contacting the first connection electrode and the second connection electrode, the insulating patterns are spaced apart from the light-emitting element and the first insulating layer.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

A display panel includes a light emitting panel including a light emitting unit; and a color conversion panel. The color conversion panel includes a color conversion layer including a color conversion region including semiconductor nanoparticles, and a partition wall defining the color conversion region. An optical diffuser is between the light emitting unit and the color conversion region to cover a light extraction surface of the light emitting unit. A length of the light extraction surface of the light emitting unit is greater than or equal to about 500 nm and less than or equal to about 100 μm and a ratio of a length of the optical diffuser to the length of the light extraction surface of the light emitting unit is greater than or equal to about 1.4:1 and less than or equal to about 60:1.

A display panel includes a light emitting panel including a light emitting unit; and a color conversion panel. The color conversion panel includes a color conversion layer including a color conversion region including semiconductor nanoparticles, and a partition wall defining the color conversion region. An optical diffuser is between the light emitting unit and the color conversion region to cover a light extraction surface of the light emitting unit. A length of the light extraction surface of the light emitting unit is greater than or equal to about 500 nm and less than or equal to about 100 μm and a ratio of a length of the optical diffuser to the length of the light extraction surface of the light emitting unit is greater than or equal to about 1.4:1 and less than or equal to about 60:1.

In order to obtain a light emitting module with a less unevenness of luminance, provided is a method for manufacturing a light emitting module comprising: preparing a light emitter and a light-transmissive light guide plate, the light emitter comprising a light emitting element, the light guide plate having a first main surface serving as a light emitting surface from which light is emitted outside and a second main surface located opposite to the first main surface and having a concave portion, the concave portion comprising a side surface and a bottom surface that is smaller than an opening of the concave portion in a cross-sectional view; fixing the light emitter to the bottom surface of the concave portion via a bonding member; and forming a wiring at an electrode of the light emitting element.

In order to obtain a light emitting module with a less unevenness of luminance, provided is a method for manufacturing a light emitting module comprising: preparing a light emitter and a light-transmissive light guide plate, the light emitter comprising a light emitting element, the light guide plate having a first main surface serving as a light emitting surface from which light is emitted outside and a second main surface located opposite to the first main surface and having a concave portion, the concave portion comprising a side surface and a bottom surface that is smaller than an opening of the concave portion in a cross-sectional view; fixing the light emitter to the bottom surface of the concave portion via a bonding member; and forming a wiring at an electrode of the light emitting element.

There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.