A display device may include: a substrate including a display area including a pixel area, and a non-display area including a pad area and located at at least one side of the display area; a pixel in the pixel area, the pixel including an emission area in which at least one light emitting element is located, and a non-emission area adjacent to the emission area; a pad in the pad area, the pad being electrically connected to the pixel; a first layer on the light emitting element at the pixel area; and a second layer in the pixel area and the pad area, the second layer including a pad opening formed exposing at least a portion of the pad. The first layer may include an organic layer including a hollow particle. The first layer may be spaced from the pad opening and covered with the second layer.

Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.

Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.

A display device includes pixels including a first pixel and a second pixel sequentially disposed in a first direction, each including sub-pixels including a first electrode, a second electrode, and a light emitting element, a driving circuit including driving elements between the pixels, pixel lines connected to the pixels, and driving lines connected to the driving elements. The driving lines are in an area between the first pixel and the second pixel, and include a first driving line extending in a second direction intersecting the first direction in the area between the first pixel and the second pixel. First electrodes included in the sub-pixels of the first pixel and first electrodes included in the sub-pixels of the second pixel are spaced apart by a distance equal to or greater than a width of the first driving line in the first direction, and do not overlap the first driving line.

A display device includes pixels including a first pixel and a second pixel sequentially disposed in a first direction, each including sub-pixels including a first electrode, a second electrode, and a light emitting element, a driving circuit including driving elements between the pixels, pixel lines connected to the pixels, and driving lines connected to the driving elements. The driving lines are in an area between the first pixel and the second pixel, and include a first driving line extending in a second direction intersecting the first direction in the area between the first pixel and the second pixel. First electrodes included in the sub-pixels of the first pixel and first electrodes included in the sub-pixels of the second pixel are spaced apart by a distance equal to or greater than a width of the first driving line in the first direction, and do not overlap the first driving line.

A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.