A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

A display device and a manufacturing method of the display device are provided. A display device includes a conductive line disposed on a substrate, a first capacitor electrode disposed on the conductive line and electrically connected to the conductive line, a passivation layer disposed on the first capacitor electrode, a first electrode disposed on the passivation layer and at least partially overlapping the first capacitor electrode in a plan view, a second electrode spaced apart from the first electrode, the second electrode and the first electrode being disposed on a same layer, and light emitting elements disposed between the first electrode and the second electrode.

A display device and a manufacturing method of the display device are provided. A display device includes a conductive line disposed on a substrate, a first capacitor electrode disposed on the conductive line and electrically connected to the conductive line, a passivation layer disposed on the first capacitor electrode, a first electrode disposed on the passivation layer and at least partially overlapping the first capacitor electrode in a plan view, a second electrode spaced apart from the first electrode, the second electrode and the first electrode being disposed on a same layer, and light emitting elements disposed between the first electrode and the second electrode.

A display device may include a substrate including pixel areas, and a pixel disposed in each of the pixel area. The pixel may include a transistor and a driving voltage line disposed in the substrate, first and second electrodes spaced apart from each other, a bank pattern disposed on the first and second electrodes, respectively, intermediate layers disposed on the bank pattern, light emitting elements disposed between two adjacent intermediate layers of the intermediate layers, a first contact electrode disposed on one of the two adjacent intermediate layers and electrically connected to an end of each of the light emitting elements, and a second contact electrode disposed on another one of the two adjacent intermediate layers and electrically connected to another end of each of the light emitting elements.

A light-emitting element extending in one direction includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to an other side of the main body and having a width less than that of the main body; and an insulation film around at least a portion of the outer surface of the semiconductor core, wherein the insulation film includes a first insulation film around the first end of the semiconductor core; and a second insulation film around the second end of the semiconductor core, wherein the diameter of an outer surface of the first insulation film is the same as a diameter of an outer surface of the second insulation film.

optoelectronic circuit intended to receive a variable voltage containing an alternation of rising and falling phases. The optoelectronic circuit includes light-emitting diodes and a switching device capable of allowing or of interrupting the flowing of a current through each light-emitting diode. Each light-emitting diode is covered with a photoluminescent layer. The photoluminescent layer covering at least one of the light-emitting diodes includes at least one first luminophore having a first decay constant and at least one second luminophore having a second decay constant different from the first decay constant.

optoelectronic circuit intended to receive a variable voltage containing an alternation of rising and falling phases. The optoelectronic circuit includes light-emitting diodes and a switching device capable of allowing or of interrupting the flowing of a current through each light-emitting diode. Each light-emitting diode is covered with a photoluminescent layer. The photoluminescent layer covering at least one of the light-emitting diodes includes at least one first luminophore having a first decay constant and at least one second luminophore having a second decay constant different from the first decay constant.