A display device includes a display panel and a repair panel overlapping a region of the display panel. The display panel includes: a substrate; a plurality of transistors on the substrate; and a first electrode connected to the transistors. The repair panel includes: a repair substrate; a plurality of connection electrodes extending through the repair substrate and on opposite surfaces of the repair substrate; a first repair electrode connected to the connection electrodes; a first repair emission layer on the first repair electrode; and a repair common electrode on the first repair emission layer. In a region where the display panel and the repair panel overlap each other, the first electrode and the first repair electrode are electrically connected to each other through the connection electrode.

A display device includes a first electrode extending in a first direction, and a second electrode spaced from the first electrode in a second direction, a plurality of light emitting elements on the first electrode and the second electrode, a light emitting element of the plurality of light emitting elements comprising a first end on the first electrode and a second end on the second electrode, a first connection electrode extending in the first direction and on the first electrode, a second connection electrode extending in the first direction and on the second electrode, a third connection electrode on the first electrode and spaced from the first connection electrode in the first direction, and a fourth connection electrode on the second electrode and spaced from the second connection electrode in the second direction, wherein the plurality of light emitting elements comprises first light emitting elements and second light emitting elements.

A method for manufacturing a light-emitting element includes forming a first light-emitting part, forming a tunnel junction part on the first light-emitting part, and forming a second light-emitting part on the tunnel junction part. The step of forming the first light-emitting part includes forming a first layer with a first p-type impurity concentration at a first temperature, and forming a second layer with a second p-type impurity concentration on the first layer. The second p-type impurity concentration is greater than the first p-type impurity concentration. The step of forming the second light-emitting part includes forming a third layer with a third p-type impurity concentration at a second temperature and forming a fourth layer with a fourth p-type impurity concentration on the third layer. The fourth p-type impurity concentration is greater than the third p-type impurity concentration. The second temperature is less than the first temperature.

A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.

A stretchable electronic device includes an array including at least two islands spaced apart from each other to dispose a device, and an interconnector to perform a stretchable action between the island, and an external connection to apply an electrical signal to the array.

A display device includes a first electrode and a second electrode disposed on a substrate, at least one light emitting element including a first semiconductor layer including a semiconductor of a first type, a second semiconductor layer including a semiconductor of a second type different from the first type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a third electrode disposed on the substrate and electrically connected to the second electrode. At least a portion of the third electrode is disposed between the first electrode and the second electrode in a plan view.

A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

A light-emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, a light-emitting layer disposed between the first and second semiconductor layers, an electrode layer disposed on the second semiconductor layer, an insulating film surrounding at least an outer surface of the light-emitting layer, and a void formed on the first semiconductor layer, the void extending in a direction in which the first semiconductor layer, the light-emitting layer, and the second semiconductor layer are disposed.

A display device includes electrodes spaced apart from each other in an emission area, a first bank disposed in a non-emission area, the first bank including an opening overlapping the emission area, light emitting elements disposed between the electrodes in the opening of the first bank, a second bank disposed on the first bank, the second bank including an opening overlapping the emission area, and a color conversion layer disposed in the opening of the second bank. The electrodes at least partially overlap the second bank.

A micro light emitting diode includes an epitaxial structure, a first electrode, a second electrode, at least one via and an insulating layer. The epitaxial structure has a surface and includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside around the first electrode and symmetrically disposed with respect to a geometric center of a bonding surface of the epitaxial structure. The via extends from the second-type semiconductor layer to the first-type semiconductor layer. The insulating layer is disposed on the second-type semiconductor layer together with the first electrode. The insulating layer extends to cover an inner wall of the via, and the via is non-symmetrically disposed with respect to the geometric center of the bonding surface of the epitaxial structure.