A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

A light-emitting device according to the present invention comprises, an electrode unit including a first electrode and a second electrode spaced apart from each other, with electrical signals having different polarity applying the first and second electrode, respectively; a first stimulation unit disposed on one surface of the electrode unit and having a first stimulation reaction layer expressing variable luminance according to a first stimulation; and a second stimulation unit disposed on the other surface facing the one surface of the electrode unit, and having a second stimulation reaction layer expressing a variable luminance according to a second stimulation different from the first stimulation.

A stacked body includes a long side and a short side in a top view. The long side extends in a first direction. The short side extends in a second direction orthogonal to the first direction. The short side is shorter than the long side. A light emission peak wavelength of a first active layer is different from a light emission peak wavelength of a second active layer. A first n-type layer includes a first n-side contact portion contacting a first electrode. A second n-type layer includes a second n-side contact portion contacting a second electrode. In a top view, a center of the first n-side contact portion is separated from a first line that passes through a center of the second n-side contact portion and is parallel to the first direction.

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode and a conductive layer. The epitaxial structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The first-type semiconductor layer includes a first portion and a second portion. A bottom area of the first portion is smaller than a top area of the second portion. A thickness of the second portion is greater than 10% of a thickness of the first-type semiconductor layer. The first electrode is disposed on the epitaxial structure and located on the first portion of the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure. The conductive layer is disposed between the first electrode and the first portion, wherein an orthographic projection area of the conductive layer on the first portion is greater than or equal to 90% of an area of the first portion.

A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

A light emitting diode (LED) stack for a display including a first LED sub-unit configured to emit a first colored light, a second LED sub-unit disposed on the first LED sub-unit and configured to emit a second colored light, and a third LED sub-unit disposed on at least one of the first LED sub-unit and the second LED sub-unit and configured to emit a third colored light, in which the first LED sub-unit is configured to emit light through the second LED sub-unit and the third LED sub-unit, and the second LED sub-unit is configured to emit light through the third LED sub-unit.

A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.

A method for fabricating a micro-light emitting diode (LED) display panel, including: forming a stack structure on a wafer substrate, the stack structure including a first metal layer, a first type of light emitting layer, a second metal layer, and a second type of light emitting layer in an order from bottom to top; forming a plurality of trenches in the stack structure, the plurality of trenches defining a plurality of micro LED display panel areas; patterning the second type of light emitting layer and the second metal layer; selectively etching the stack structure to expose a side surface of the first metal layer, thereby forming a plurality of first LEDs and a plurality of second LEDs in each micro LED display panel area; and cutting the wafer substrate to form a plurality of micro LED display panels.

Disclosed herein are light emitting diode devices having one or more high reflectivity mesa sidewall electrodes and methods of fabricating thereof.

An LED micro display device includes a circuit substrate, micro light-emitting elements, an insulating layer, and a common electrode layer. The circuit substrate has conductive patterns. The micro light-emitting elements are bonded to the circuit substrate and disposed corresponding to the conductive patterns. Each micro light-emitting element has a bottom surface, a top surface and a side wall. The bottom surface connects to the corresponding conductive pattern. The side wall has a first sidewall portion adjacent to the circuit substrate and a second sidewall portion connected to the first sidewall portion. The insulating layer is disposed on the circuit substrate, covers first sidewall portions, and exposes second sidewall portions. The common electrode layer covers the insulating layer and second sidewall portions. The common electrode layer is electrically connected to the micro light-emitting elements, contacts the second sidewall portions, and exposes the top surfaces.