A multi-color light emitting pixel unit includes a substrate, and a light emitting transistor formed on the substrate. The light emitting transistor includes a bottom conductive layer formed on the substrate and a top conductive layer formed over the bottom conductive layer, an upper light emitting layer formed between the top conductive layer and the bottom conductive layer, at least one lower light emitting layer formed between the upper light emitting layer and the bottom conductive layer, and an electrical connector electrically connecting the at least one lower light emitting layer and the bottom conductive layer.

A light emitting device package including a substrate, a light emitting structure including a plurality of epitaxial stacks sequentially stacked on the substrate configured to emit light having different wavelength bands from each other, the light emitting structure having a light emitting area defined by the epitaxial stacks, a plurality of bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, a molding layer covering a side surface and an upper surface of the light emitting structure, a plurality of fan-out lines disposed on the molding layer and connected to the light emitting structure through the bump electrodes, and an insulating layer disposed on the fan-out lines and exposing a portion of the fan-out lines, in which the exposed portion of the fan-out lines does not overlap with the light emitting area.

A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.

Methods and structures are disclosed for highly efficient vertical devices. The vertical device comprising a plurality of planar active layers formed on a substrate, at least one of a top layer of the plurality of the layers is formed as a plurality of nano-pillars and a passivation layer formed on a space between the plurality of the nanopillars.

A display device including a circuit board, and pixels each including a light emitting structure including epitaxial stacks and having a light emitting area defined by the epitaxial stacks, an encapsulating member covering a side surface and an upper surface of the light emitting structure, bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, and fan-out lines disposed on the encapsulating member and electrically connected to the light emitting structure through the bump electrodes, in which at least a first portion of a surface of the fan-out lines is exposed to the outside to receive electrical signal for independent driving of the light emitting structure, and the first portion of the fan-out lines does not overlap the light emitting area in a plan view.

A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Provided is a semiconductor light emitting element including a semiconductor stacked structure having a projecting portion from which light is emitted, an insulating layer provided on a side face of the projecting portion and a bottom face on a periphery of the projecting portion, a transparent electrode provided on a top face of the projecting portion and on at least part of a front surface of the insulating layer, and an electrode covering the bottom face on the periphery of the projecting portion and covering at least part of the transparent electrode provided on the front surface of the insulating layer.

A Gunn diode is disclosed which comprises a first contact layer (110), a second contact layer (120), and an active layer (130) based on a gallium nitride (GaN) semiconductor material having a base surface (132) and a side surface (135) non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer (110) electrically contacts the side surface (135) to form a side contact (115). The second contact layer (120) forms an electrical contact for the base surface (132), so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer (110) and the second contact layer (120) at the side contact (115).

There is provided a display device including a base substrate, a conductive connection layer on the base substrate, a partitioning wall on the conductive connection layer, and a light emitting element on the conductive connection layer and in a space surrounded by the partitioning wall in a plan view, wherein the conductive connection layer includes a first portion overlapping the partitioning wall and the light emitting element, and a second portion not overlapping the partitioning wall and the light emitting element, an electrical conductivity of the first portion being greater than an electrical conductivity of the second portion.