A display device includes a first electrode disposed on a substrate; a light emitting element disposed on the first electrode, the light emitting element being electrically connected to the first electrode; a second electrode disposed on the light emitting element, the second electrode being electrically connected to the light emitting element; a meta structure disposed on the second electrode, the meta structure overlapping the light emitting element; and a bank pattern disposed on the substrate, the bank pattern being spaced apart from the light emitting element.

A light emitting diode (LED) pixel for a display including a first LED stack, a second LED stack disposed on a partial region of the first LED stack, a third LED stack disposed on a partial region of the second LED stack, a first ohmic electrode disposed on the first LED stack and forming ohmic contact with the first LED stack, a second transparent electrode disposed between the second LED stack and the third LED stack and in ohmic contact with an upper surface of the second LED stack, and a third transparent electrode in ohmic contact with an upper surface of the third LED stack, in which the first ohmic electrode is laterally spaced apart from the second LED stack.

Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a method for manufacturing a light emitting apparatus involves forming a plurality of semiconductor layers including a first semiconductor layer, a second semiconductor layer, and a light emission layer between the first semiconductor layer and the second semiconductor layer. The method further involves forming an electrical contact and a spacer. The electrical contact is formed on a surface of the first semiconductor layer. The spacer is formed on the surface of the first semiconductor layer, around the electrical contact. After forming the spacer, the plurality of semiconductor layers is etched to form a mesa with sidewalls that extend from an outer edge of the spacer. The spacer operates as an etch mask that causes the electrical contact to be substantially centered between opposing sidewalls of the mesa.

A display device including a first integrated circuit including: an assembly of light-emitting diodes, each diode including a vertical stack of a first semiconductor layer of a first conductivity type and of a second semiconductor layer of a second conductivity type; and on the side of a surface of the first circuit opposite to the first semiconductor layer, a connection structure including a dielectric layer having a plurality of identical or similar connection pads, regularly distributed across the entire surface of the first circuit, arranged therein, each diode having a first electrode in contact with at least one pad of the connection structure, and a second electrode in contact with a plurality of pads of the connection structure at the periphery of the plurality of diodes.

An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.

A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.

The embodiment relates to a semiconductor light emitting device for a display panel and a display device including the same. The semiconductor light emitting device can include a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second reflective electrode layer electrically connected to the second conductivity-type semiconductor layer, a passivation layer disposed on the light emitting structure, a first reflective electrode layer disposed on a side surface of the light emitting structure. The first reflective electrode layer can include a first-first reflective electrode layer in contact with a side surface of the light emitting structure and a first-second reflective electrode layer connected to the first-first reflective electrode layer and disposed on the passivation layer.

A light emitting diode and a method of fabricating the same are provided. The light emitting diode according to exemplary embodiments includes a lower n-type semiconductor layer, an active layer, a p-type semiconductor layer, a high-concentration n-type semiconductor layer, and an upper n-type semiconductor layer. The high concentration n-type semiconductor layer can have a higher n-type doping concentration than that of the lower or upper n-type semiconductor layer. Oxygen concentrations on a lower surface and an upper surface of the high-concentration n-type semiconductor layer may be substantially same. An electron blocking layer may be interposed between the active layer and the p-type semiconductor layer.

The present invention relates to an LED device, more particularly, to an ultra-thin fin LED device and a method for manufacturing the same.

A display includes: a first electrode including a first electrode line and a second electrode line; a light-emitting device between the first electrode line and the second electrode line; a first contact electrode including a first pattern overlapping the first electrode line and one end of the light-emitting device and a second pattern overlapping the second electrode line and the other end of the light-emitting device; a second electrode on the light-emitting device and overlapping the first electrode and the light-emitting device; and a second contact electrode between the light-emitting device and the second electrode, wherein a light-emitting device includes a plurality of semiconductor layers and an insulating film partially surrounding the external surfaces of the semiconductor layers, a main body unit, and a light-emitting unit on the main body unit and having a shorter length than the main body unit.