An optoelectronic device including: a first, p-doped semiconductor layer and a second, n-doped semiconductor layer which are superposed and form a p-n junction; a first electrode electrically connected to the first semiconductor layer and forming an anode of the device; a gate positioned against at least one lateral flank of the first semiconductor layer; a second electrode, positioned against a lateral flank of the second semiconductor layer, electrically connected to the second semiconductor layer and electrically isolated from the first semiconductor layer; and in which a portion of the second electrode is positioned against the gate such that the second electrode is electrically connected to the gate and forms both a gate electrode and a cathode of the device.

Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.

An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a second electrode pad which are spaced apart from each other, and the area ratio of the electrode pad to the second conductive layer is 1:20 to 1:27.

A light-emitting device includes a pair of light-transmissive insulator sheets disposed opposite to each other and two types of light-transmissive electroconductive layers disposed on a common one of or separately on one and the other of the pair of light-transmissive insulator sheets, and at least one light-emitting semiconductor each provided with a cathode and an anode which are individually and electrically connected to the two types of the light-transmissive electroconductive layers. The electrical connection and mechanical bonding between the members are improved by a light-transmissive elastomer which is between the pair of light-transmissive insulator sheets. A method in which a light-emitting semiconductor element and a light-transmissive electroconductive member are subjected to vacuum hot-pressing.

A display device includes a first inner bank and a second inner bank that are disposed on a substrate and spaced apart from each other, a first electrode disposed on a partial area of the first inner bank and a second electrode covering the second inner bank, and a light-emitting element between the first electrode and the second electrode, wherein an end portion of the light-emitting element does not overlap the first electrode in a thickness direction of the substrate, and another end portion of the light-emitting element overlaps the second electrode in a thickness direction.

A display device includes pixel areas; and a pixel disposed in each of the pixel areas. The pixel includes a first electrode and a second electrode disposed on a substrate and disposed on a same layer, a light emitting element disposed on the first electrode and the second electrode, a third electrode electrically connecting the first electrode to a first end of the light emitting element, a fourth electrode electrically connecting the second electrode to a second end of the light emitting element, and an electrode pattern and the electrode pattern and one of the third electrode and the fourth electrode being disposed on a same layer.

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

The present disclosure provides a lighting device and a manufacturing method thereof. The lighting device of an embodiment includes a substrate, a light emitting unit and a light adjusting layer. The light emitting unit is disposed on the substrate, and the light emitting unit includes a light output surface. The light adjusting layer is disposed on the light emitting unit, and the light adjusting layer includes a first portion and a second portion connected to the first portion. Wherein, the first portion only partially covers the light output surface, and the second portion does not cover the light output surface.