A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.

A light source module includes a circuit board, light emitting diode chips on an upper surface of the circuit board, the light emitting diode chips being spaced apart and each emitting blue light and having a first surface facing the upper surface of the circuit board, a second surface opposite the first surface, and first and second electrodes on the first surface, a first multilayer reflective structure on the second surface and including a plurality of alternately stacked insulating layers having different refractive indices, and a lens respectively covering each of the light emitting diode chips and contacting the upper surface of the circuit board at an acute contact angle, the lens having a thickness of 2.5 mm or less from the upper surface of the circuit board, and a contact region with the upper surface of the circuit board with a diameter of 1 mm to 3 mm.

A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.

A display device includes a substrate, a first electrode extending in a first direction on the substrate, a first partition wall extending in the first direction on a central portion of the first electrode, a second electrode extending in parallel with the first electrode on the substrate, a second partition wall extending in the first direction on a central portion of the second electrode, and a plurality of light-emitting diodes electrically connected between the first electrode and the second electrode.

An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

The present disclosure relates to a display substrate, a display device, and a method for manufacturing a display substrate. The display substrate includes a base substrate having a first side and a second side opposite to the first side, a via provided in the base substrate, a thin film transistor provided on the first side of the base substrate, a first conductive structure provided on the first side of the base substrate, wherein a first sub-portion of the first conductive structure is located in the via, and wherein a material of the first conductive structure is the same as a material of a source/drain electrode of the thin film transistor.

An optoelectronic semiconductor device may include a semiconductor layer sequence, a directionally reflective layer being arranged on the first main surface of the semiconductor layer sequence, a first contact structure comprising a first current spreading structure arranged on a first surface of a first semiconductor layer of the semiconductor layer sequence, a second contact structure comprising a second current spreading structure arranged on a first surface of a second semiconductor layer of the layer stack, wherein the first current spreading structure and the second current spreading structure each consist of at least one transparent conductive oxide. Moreover, a method for producing an optoelectronic semiconductor device is described.

A pixel includes a first electrode and a second electrode spaced from each other in a first direction on a substrate; a plurality of light emitting elements between the first electrode and the second electrode; an intermediate pattern located between the first electrode and the second electrode in the first direction and located between the substrate and the plurality of light emitting elements in a thickness direction of the substrate; a first contact electrode electrically connecting one end portion of each of the light emitting elements and the first electrode; and a second contact electrode electrically connecting an other end portion of each of the light emitting elements and the second electrode.

A display device includes a substrate, first and second bridge electrodes on the substrate and spaced apart from each other, a first electrode on the first bridge electrode, a second electrode on the second bridge electrode and spaced apart from the first electrode, a first insulating layer on the first electrode and the second electrode, a light emitting element on the first insulating layer, and on the first electrode and the second electrode, a first connection electrode on the first electrode, and contacting the light emitting element and the first bridge electrode, and a second connection electrode on the second electrode, and contacting the light emitting element and the second bridge electrode, wherein the first electrode directly contacts the first bridge electrode, and is separated from the first connection electrode, and wherein the second electrode directly contacts the second bridge electrode, and is separated from the second connection electrode.

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.