An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.

A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

A display apparatus including a panel substrate, and a light emitting source disposed on the panel substrate, in which the light emitting source includes a substrate, an electrode disposed on the substrate, a light emitting structure disposed on the electrode and having an n-type semiconductor layer, a p-type semiconductor layer, an n-type electrode, and a p-type electrode, a transparent electrode disposed on the light emitting structure, and an adhesive layer disposed on the light emitting structure, the n-type electrode is electrically connected to the electrode, the p-type electrode is electrically connected to the transparent electrode, and the adhesive layer is disposed between the p-type electrode and the transparent electrode.

Embodiments of the invention are directed to structures in a vertical light emitting device that prevent light from being generated beneath absorbing structures, and/or direct light away from absorbing structures. Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A bottom contact is disposed on a bottom surface of the semiconductor structure. The bottom contact is electrically connected to one of the n-type region and the p-type region. A top contact is disposed on a top surface of the semiconductor structure. The top contact is electrically connected to the other of the n-type region and the p-type region. The top contact includes a first side and a second side opposite the first side. A first trench is formed in the semiconductor structure beneath the first side of the top contact. A second trench is formed in the seminconductor structure beneath the second side of the top contact.

A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/In.sub.xGa.sub.1-xP layer (0≦x≦1) 125b.

A deep ultraviolet LED with a design wavelength of λ is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of λ; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

A display apparatus including a light emitting diode part including a plurality of regularly arranged light emitting diodes, and a TFT panel part configured to drive the light emitting diode part. The light emitting diode part includes a transparent electrode, the light emitting diodes regularly disposed on a first surface of the transparent electrode and electrically connected to the transparent electrode, a plurality of first reflective electrodes disposed at sides of the light emitting diodes, surrounding the light emitting diodes, and electrically connected to the transparent electrode, and a plurality of second reflective electrodes electrically connected to the light emitting diodes, respectively, and reflecting light emitted from the light emitting diodes.

According to one embodiment, a display device includes a plurality of light emitting elements mounted on an insulating substrate, a plurality of lines connected to the plurality of light emitting elements, and a planarization film provided between the light emitting elements and the insulating substrate, wherein each of the plurality of light emitting elements comprises a first electrode and a second electrode that are connected to the lines, the planarization film includes a recess portion around each of the light emitting elements, a reflective portion formed of a reflective material is provided on a side surface of the recess portion.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.