A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

A light-emitting array includes a semiconductor LED structure, multiple transparent dielectric bodies, a set of multiple, independent first electrical contacts, and a set of second electrical contacts. The LED structure extends contiguously over the array. The second electrical contacts are in electrical contact with the second semiconductor layer. Each dielectric body protrudes away from the first semiconductor layer and has on its surface an electrically conductive layer in electrical contact with the first semiconductor layer, forming a portion of a corresponding one of the first electrical contacts. Each dielectric body and corresponding first electrical contact define a corresponding discrete, circumscribed pixel region within the contiguous area of the array, each pixel region separate from the others. Some light emitted in the pixel region propagates into the dielectric body, undergoes internal reflection(s) within the dielectric body, and propagates out of the array through the dielectric body and diode structure.

A photo-emission semiconductor device superior in reliability is provided. The photo-emission semiconductor device includes a semiconductor layer, a light reflection layer provided on the semiconductor layer, and a protective layer formed by electroless plating to cover the light reflection layer. Therefore, even if the whole structure is reduced in size, the protective layer reliably covers the light reflection layer without gap.

A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts, a lateral dielectric layer on the side surfaces of the LED, and an electrically conductive bonding layer on the lateral dielectric layer. The bonding layer is electrically coupled to the anode electrical contact and electrically insulated from side surfaces of the active and n-doped layers by the lateral dielectric layer. The LED has a cross-sectional area that increases monotonically with increasing distance from its anode contact surface toward its light-exit surface. Side-surface shape is arranged so that internal reflection within the LED or lateral dielectric layer redirects a portion of light, emitted by the active layer and propagating within the LED outside an escape cone, to propagate toward the exit surface of the n-doped layer within the escape cone.

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

A light-emitting diode having a stack-like structure, whereby the stack-like structure comprises a substrate layer and a mirror layer and an n-doped bottom cladding layer and an active layer, producing electromagnetic radiation, and a p-doped top cladding layer and an n-doped current spreading layer, and the aforementioned layers are arranged in the indicated sequence. The active layer comprises a quantum well structure. A tunnel diode is situated between the top cladding layer and the current spreading layer, whereby the current spreading layer is formed predominantly of an n-doped Ga-containing layer, having a Ga content >1%.

A light emitting device includes: a substrate; a light emitting element disposed on the substrate, the light emitting element having an upper surface and a lateral surface; a reflecting layer located on the upper surface of the light emitting element; a first light-transmissive member having a first surface in contact with the lateral surface of the light emitting element, and a second surface that is inclined toward the substrate in a direction outward from the light emitting element; and a second light-transmissive member in contact with the second surface and covering the light emitting element. A refractive index of the first light-transmissive is smaller than a refractive index of the second light-transmissive member.

A light-emitting device includes: a semiconductor laser element; a supporting member located above the semiconductor laser element, the supporting member having a through-hole that allows light emitted from the semiconductor laser element to pass therethrough; a fluorescent member located in the through-hole, the fluorescent member containing a fluorescent material that is excitable by light emitted from the semiconductor laser element so as to emit light having a wavelength different from a wavelength of the light emitted from the semiconductor laser element; and a light-transmissive heat dissipating member including: a base portion, and a projecting portion projecting from the base portion into the through-hole. An upper surface of the projecting portion of the heat dissipating member is bonded to a lower surface of the fluorescent member. An upper surface of the base portion of the heat dissipating member is bonded to a lower surface of the supporting member.

A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.

A light-emitting device includes: a base member; a base body formed on an upper surface of the base member, the base body including a wiring layer; a light-emitting element mounted on an upper surface of the base body, wherein the light-emitting element includes an element-substrate, and a semiconductor layer located on the element-substrate; a resin frame located on the upper surface of the base body; and a first resin located inside the resin frame to cover a part of side surfaces of the light-emitting element, a part of inner side surface of the resin frame, and the upper surface of the base body. The first resin includes: a reflective material layer that contains a reflective material, and a resin layer that is located on an upper surface of the reflective material layer and does not contain the reflective material.