The present invention discloses a flip-chip LED chip used in a backlight and a producing method thereof. The flip-chip LED chip used in the backlight comprises a substrate, an epitaxial layer, a transparent conductive layer, an insulating layer, a first reflecting layer, a second reflecting layer, a first electrode, and a second electrode. In the present invention, the first reflecting layer and the second reflecting layer are formed on both sides of the substrate. By adjusting the reflectance of the first reflecting layer and the second reflecting layer, the light emitted by the epitaxial layer is reflected by the first reflecting layer and the second reflecting layer, resulting in 20-40% of the light being emitted from the back of the chip, and 60-80% of the light being emitted from the side of the chip. This increases the light uniformity of the LED backlight.

A display device includes a first substrate, a light-emitting element on the first substrate, a second substrate opposed to the first substrate, a first protruding structure surrounding the light-emitting element on a surface of the second substrate opposed to the first substrate, and a light-shielding film overlapping the first protruding structure between the first substrate and the second substrate, wherein a supplementary angle of an inclination angle of a side surface of the first protruding structure is 30 degrees or more and 90 degrees or less. In addition, the display device further includes a reflective film on the side surface of the first protruding structure. Furthermore, the light-shielding film is located between the first protruding structure and the second substrate. Besides, a surface of the first protruding structure on a side of the second substrate is smaller than the light-shielding film.

An arrangement is disclosed. The arrangement comprises at least one semiconductor structure configured to convert a primary radiation into a secondary radiation; an encapsulation layer covering the at least one semiconductor structure; and at least one reflective layer arranged on the encapsulation layer. The semiconductor structure is arranged in a center of the arrangement, and a lateral extent of the arrangement is chosen such that an optically resonant condition is fulfilled for a wavelength of the secondary radiation in the encapsulation layer. Methods for producing an arrangement and an optoelectronic device are also disclosed.

In an embodiment, a method includes: connecting a light emitting diode to a substrate; encapsulating the light emitting diode with a photosensitive encapsulant; forming a first opening through the photosensitive encapsulant adjacent the light emitting diode; and forming a conductive via in the first opening.

A LED structure includes a substrate, a LED unit formed on the substrate, a first reflector layer formed between the substrate and the LED unit, and a second reflector layer formed on the LED unit. A common anode layer of the LED unit is formed on the first reflector layer. The first reflector layer, the LED unit and the second reflector layer are configured to collectively provide a resonant cavity.

There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

A display device includes a substrate, a plurality of pixels, a light emitting element, and an inorganic insulating layer. The pixels are provided to the substrate. The light emitting element is provided to each of the pixels. The inorganic insulating layer has translucency and covers at least part of the light emitting element. The inorganic insulating layer includes a side part and an extending part. The side part is provided to the side surface of the light emitting element. The extending part is provided at a side on the lower end of the side part and extending toward the outer side of the light emitting element than the side part in planar view seen from the normal direction of the substrate.

A display device comprising: a first substrate; a plurality of pixels provided to the first substrate; a light emitting element provided to each of the pixels; a phosphor layer covering at least an upper surface of the light emitting element; a first reflective layer facing a side surface of the light emitting element; and a second reflective layer provided to a side surface of the phosphor layer, separated from the first reflective layer in a normal direction of the first substrate, and disposed farther away from the first substrate than the first reflective layer.

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first reflective layer, a first spacer region, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math.λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.