An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

The present invention discloses a flip-chip LED chip used in a backlight and a producing method thereof. The flip-chip LED chip used in the backlight comprises a substrate, an epitaxial layer, a transparent conductive layer, an insulating layer, a first reflecting layer, a second reflecting layer, a first electrode, and a second electrode. In the present invention, the first reflecting layer and the second reflecting layer are formed on both sides of the substrate. By adjusting the reflectance of the first reflecting layer and the second reflecting layer, the light emitted by the epitaxial layer is reflected by the first reflecting layer and the second reflecting layer, resulting in 20-40% of the light being emitted from the back of the chip, and 60-80% of the light being emitted from the side of the chip. This increases the light uniformity of the LED backlight.

Light emitting devices are described herein. A light-emitting device includes a substrate having a surface below an optical cavity, one or more light emitting diodes (LEDs) disposed above the surface of the substrate, a first wavelength-converting layer, and a second wavelength-converting layer. The first wavelength-converting layer is disposed on the surface of the substrate below the optical cavity, covers the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, and has a thickness that is equal to or less than a thickness of at least one of the one or more LEDs. The second wavelength-converting layer is disposed above the optical cavity.

An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

A lighting device is provided comprising at least one light-emitting element comprising a light-emitting surface configured to emit light; and a light-guiding sheet at least partially covering the light-emitting surface and comprising at least one cavity forming a passage for light emitted from the light-emitting surface. Thereby, at least one lateral surface limiting the at least one cavity is configured to reflect light emitted from the light-emitting surface. Further, a size of an opening of the at least one cavity facing the light-emitting surface is smaller than an area of the light-emitting surface.

An inorganic light-emitting diode display panel and manufacturing method thereof and a display device are provided. The inorganic light-emitting diode display panel includes: a base substrate; a microcavity structure and an inorganic light-emitting diode which are disposed on the base substrate. The microcavity structure includes a reflective layer, a semi-reflective layer and a dielectric layer located between the reflective layer and the semi-reflective layer; the inorganic light-emitting diode includes a light-emitting layer, and the light-emitting layer is located in the dielectric layer; and a distance between the reflective layer and the semi-reflective layer is in a same order of magnitude as a wavelength of light emitted by the inorganic light-emitting diode.

A top-emitting light-emitting diode includes a glass substrate, a polysilicon layer, a white light emitting layer and a transparent conductive layer. The polysilicon layer is formed on a first surface of the glass substrate. Moreover, plural sub-wavelength structures are discretely arranged on a surface of the polysilicon layer at regular intervals. The white light emitting layer is formed over the polysilicon layer and the plural sub-wavelength structures. The transparent conductive layer is formed over the white light emitting layer.

A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

A micro light emitting diode (micro LED) apparatus. The micro LED apparatus includes a thin film transistor array substrate including a plurality of thin film transistors; an array of a plurality of micro LEDs on the thin film transistor array substrate, a respective one of the plurality of micro LEDs being connected to a respective one of the plurality of thin film transistors; and a plurality of microcavities respectively on a side of the plurality of micro LEDs away from the thin film transistor array substrate. The plurality of microcavities include a first microcavity having a first optical path length and a second microcavity having a second optical path length different from the first optical path length. The first microcavity is configured to allow a light of a first color to transmit there-through. The second microcavity is configured to allow a light of a second color to transmit there-through.

An optoelectronic device includes a LED that is suited to the emission of a radiation and that includes an active layer, and a conversion layer that extends over the active layer of the LED and that includes a plurality of fluorophores suited to the conversion of the radiation emitted by the LED, wherein the conversion layer is confined laterally by a mirror reflecting both the radiation converted by the fluorophores and the radiation not converted by the fluorophores, and vertically between a first and a second multilayer reflective filters forming a resonant Fabry-Perot cavity that blocks the radiation not converted by the fluorophores and has a transmittance peak for the radiation converted by the fluorophores.