The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first reflective layer, a first spacer region, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math./n. K is a constant ranging from 0.25 to 10, is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

Embodiments of the present disclosure provide an optical resonant cavity and a display panel. The optical resonant cavity includes a light conversion layer, the optical resonant cavity is configured to emit light with a specific wavelength range, and the light conversion layer is arranged at at least one wave node of a center wavelength of the light with the specific wavelength range in the optical resonant cavity.

A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and 10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

One embodiment relates to a light emitting device package having improved luminous flux, and a light emitting device package, according to one embodiment of the present invention, comprises: a light emitting device having an electrode pad arranged at a lower surface thereof; a wavelength conversion layer for covering four lateral surfaces of the light emitting device; a first reflective pattern for covering an upper surface of the light emitting device and three lateral surfaces of the light emitting device so as to expose the wavelength conversion layer of the one remaining lateral surface, which is a light emitting surface of the light emitting device; and a second reflective pattern arranged between the first reflective pattern and the upper surface of the light emitting device.

Apparatus, systems, methods, and articles of manufacture to generate, trap, and convert light using a micro light emitting diode (LED) or similar device are disclosed. An example apparatus includes a first mirror to reflect a first wavelength light and a second wavelength light. The example apparatus includes a micro LED on the first mirror, the micro LED to generate the first wavelength light. The example apparatus includes a quantum dot film on the micro LED, the quantum dot film to convert the first wavelength light to the second wavelength light. The example apparatus includes a second mirror on the quantum dot film, the second mirror to reflect the first wavelength light and transmit the second wavelength light.

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first spacer region, a first reflective layer, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math./n. K is a constant ranging from 0.25 to 10, is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first spacer region, a first reflective layer, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math./n. K is a constant ranging from 0.25 to 10, is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

A light emitting device including a micro cavity having a phase modulation surface and a display apparatus including the light emitting device are provided. The light emitting device includes a reflective layer including a phase modulation surface; a first electrode disposed on the phase modulation surface of the reflective layer; a light emitting structure disposed on the first electrode; and a second electrode disposed on the light emitting structure. The phase modulation surface may include a plurality of nano scale patterns that are regularly or irregularly arranged. The reflective layer and the second electrode may constitute the micro cavity having a resonance wavelength of the light emitting device.

A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.