A quantum dot includes crystalline nanoparticle, wherein the quantum dot has a multi-layer structure including core particle and a plurality of layers on the core particle, and has Zn, S, Se, and Te as constituent elements, and the quantum dot has at least one quantum well structure in a radial direction from the center of the quantum dot. Therefore, quantum dots, which are crystalline nanoparticles, which do not contain harmful substances such as Cd and Pb, have excellent light emission characteristics such as half-value width at half maximum, and have high quantum efficiency.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a solid material composition comprising luminescent crystals 11 from the class of perovskite crystals, embedded in a solid matrix 14 comprising a polymer P1 or Small Molecules SM1 and metal selected from Mg, Sr, Ba, Sc, Y, Zn, Cd, In, and Sb. Further described are components and devices comprising the same. Also described are methods for manufacturing such components and devices comprising such components and liquid compositions useful for such manufacturing.

A semiconductor light-emitting device includes: a substrate having a wiring electrode; a semiconductor light-emitting element mounted on the wiring electrode and having a light-emitting functional layer with an upper surface exposed; a wavelength conversion plate mounted on the light-emitting functional layer and being made of a sintered body including fluorescent material particles and binder particles; and an adhesive layer including a resin medium for adhering a light-incident surface of the wavelength conversion plate to a light output surface of the light-emitting functional layer, and resin particles dispersed in the resin medium. The light-incident surface can expose a sintered surface of the sintered body with a concave portion, and the resin particles are fitted in the concave portion and compressively deformed. The semiconductor light-emitting device is capable of reducing the heat generated from the wavelength conversion plate and of maintaining the high light output.

A light-emitting diode is disclosed, which includes: a substrate; a light-emitting diode chip disposed on the substrate; and a quantum dot film disposed on the light-emitting diode chip, wherein the quantum dot film includes a plurality of quantum dots and a matrix material, and a plurality of particles are dispersed in the matrix material, wherein the plurality of particles are conductive particles, semiconductor particles, or a combination thereof.

Fluorescent material composite particles include translucent inorganic particles having a volume average particle diameter in a range of 30 nm or more and 500 nm or less, fluorescent nanoparticles having an average particle diameter in a range of 5 nm or more and 25 nm or less, and a first resin. At least a part of each of the translucent inorganic particles are embedded in the first resin. The translucent inorganic particles are unevenly distributed to a surface of the fluorescent material composite particles. The fluorescent material composite particles have a volume average particle diameter in a range of 0.5 μm or more and 50 μm or less.

An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.

A phosphor plate including: a complex containing an α-sialon phosphor and a sintered body containing spinel represented by a general formula M.sub.2xAl.sub.4-4xO.sub.6-4x (where M represents at least one of Mg, Mn, and Zn, and 0.2<x<0.6). In addition, there is provided a light emitting device including: a group III nitride semiconductor light emitting element; and the phosphor plate provided on one surface of the group III nitride semiconductor light emitting element. Further, there is provided a method for manufacturing the phosphor plate.

An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.

Provided are a light-emitting device and a display apparatus. The light-emitting device includes: sub-pixels located on an array substrate, the sub-pixels each includes a first electrode and a second electrode that are disposed opposite to each other, and a quantum migrating layer between the first electrode and the second electrode. The quantum migrating layer includes a non-light-exiting region and a light-exiting region corresponding to a backlight source. Transparent charged particles and quantum dots, which can be driven by an electric field to migrate in the light-exiting region and the non-light-exiting region, are encapsulated in an accommodating cavity of the quantum migrating layer. When there are quantum dots gathered in the light-exiting region, the quantum dots are excited to emit light; when there is no quantum dot in the light-exiting region, the light emitted by the backlight source directly passes and exits through the light-exiting region.

A chip transfer assembly and a manufacturing method therefor, a chip transfer method, and a display backplane. The chip transfer assembly comprises a transfer substrate (1); a porous adhesive layer (2) formed on the transfer substrate, first pores (21) being distributed in the porous adhesive layer; and at least one colloid protrusions (3) formed on the porous adhesive layer, the colloid protrusions having light transmittance, and second pores (31) used for accommodating luminescent conversion particles (4) being distributed in the colloid protrusions; after an LED chip (7) is transferred to a chip soldering zone, the colloid protrusions separate from the porous adhesive layer and remain on the LED chip to form a luminescent conversion layer.