The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

A lighting system that is part of a headlight module of a motor vehicle includes an array of LED light sources that include no organic materials. Each light source includes a glass lens attached to a phosphor glass converter plate, which itself is attached to an LED die that is flip-chip mounted on a mounting substrate. The converter plate includes phosphor particles embedded in glass. Each lens is disposed laterally over a single LED die. The converter plate is attached to the LED die by a first bonding layer, and the lens is attached to the converter plate by a second bonding layer. Both bonding layers are made of a metal oxide and are thinner than the converter plate. Either each lens does not extend horizontally outside the lateral boundary of each converter plate, or the lens portions centered on each LED die are part of a unitary lens array.

A structure and a method for producing a structure are disclosed. In an embodiment a structure includes at least one semiconductor structure comprising at least one semiconductor nanocrystal and a high-density element for increasing a density of the structure, wherein a density of the high-density element is greater than a density of silica, and wherein the structure is configured to emit light.

A phosphor plate includes a plate-like composite including a base material and an α-type sialon phosphor present in the base material, in which, in an X-ray diffraction analysis pattern using a Cu-Kα ray, in a case in which peak intensity corresponding to the α-type sialon phosphor having a diffraction angle 2 θ in a range of 30.2° or more and 30.4° or less is defined as I.sub.α and peak intensity of a peak having a diffraction angle 2 θ in a range of 26.6° or more and 26.8° or less is defined as I.sub.β, I.sub.α, and I.sub.β satisfy 0<I.sub.β/I.sub.α≤10.

The present invention is directed to a wavelength converter comprising a non-luminescent substrate layer, at least one polysiloxane layer, wherein at least one of the polysiloxane layers comprises a phosphor material. Furthermore, the present invention is directed to a method for preparing a wavelength converter, a light emitting device and a method for preparing a light emitting device.

Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

A method of producing an optoelectronic semiconductor device includes providing a frame part including a plurality of openings, providing an auxiliary carrier, connecting the auxiliary carrier to the frame part such that the auxiliary carrier covers at least some of the openings at an underside of the frame part, placing conversion elements onto the auxiliary carrier in at least some of the openings, placing optoelectronic semiconductor chips onto the conversion elements in at least some of the openings, applying a housing onto the conversion elements and around the semiconductor chips in at least some of the openings, and removing the frame part and the auxiliary carrier wherein a bottom surface of at least some of the optoelectronic semiconductor chips remains free of the housing.

A rare earth complex including a rare earth ion and a ligand coordinated with the rare earth ion and having a condensed polycyclic aromatic group. The condensed polycyclic aromatic group is a residue formed by removing a hydrogen atom from a condensed polycyclic aromatic compound represented by the following formula (I) or (II): ##STR00001##

A lighting system that is part of a headlight module of a motor vehicle includes an array of LED light sources that include no organic materials. Each light source includes a glass lens attached to a phosphor glass converter plate, which itself is attached to an LED die that is flip-chip mounted on a mounting substrate. The converter plate includes phosphor particles embedded in glass. Each lens is disposed laterally over a single LED die. The converter plate is attached to the LED die by a first bonding layer, and the lens is attached to the converter plate by a second bonding layer. Both bonding layers are made of a metal oxide and are thinner than the converter plate. Either each lens does not extend horizontally outside the lateral boundary of each converter plate, or the lens portions centered on each LED die are part of a unitary lens array.

A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.