Patent classifications
H01L33/501
DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.
Optoelectronic component
The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.
OPTOELECTRONIC DEVICE AND METHOD
An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.
PATTERNED DOWNCONVERTER AND ADHESIVE FILM FOR MICRO-LED, MINI-LED DOWNCONVERTER MASS TRANSFER
A downconverter layer transfer device, and methods of making and using the downconverter layer transfer device, are disclosed. A downconverter layer transfer device includes a release liner and a downconverter layer disposed on the release liner, the downconverter layer including a downconverter material dispersed throughout an adhesive, the downconverter layer being solid and non-adhesive at a first temperature, and adhesive at an elevated temperature above the first temperature
Luminophore mixture, conversion element and optoelectronic component
The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.
QUANTUM DOT COMPOSITE, OPTICAL FILM, AND BACKLIGHT MODULE
A quantum dot composite, an optical film, and a backlight module are provided. The quantum dot composite includes a polymerizable polymer and a plurality of quantum dot particles dispersed in the polymerizable polymer. Based on a total weight of the polymerizable polymer being 100 wt %, the polymerizable polymer includes: 5 wt % to 30 wt % of a monofunctional acrylic monomer, 10 wt % to 40 wt % of a multifunctional acrylic monomer, 15 wt % to 40 wt % of a thiol compound, 1 wt % to 5 wt % of a photoinitiator, 5 wt % to 25 wt % of an allyl monomer, and 3 wt % to 30 wt % of scattering particles.
High Color Rendering White Light Emitting Devices And High Color Rendering Photoluminescence Compositions
A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.
Curable granular silicone composition, cured object obtained therefrom, and production method therefor
Provided is a curable granular silicone composition which has hot-melt properties, is excellent in terms of handleability and curability in overmolding and the like, and gives cured objects and the like highly inhibited from taking a color at high temperatures. The curable granular silicone composition comprises: (A) organopolysiloxane resin fine particles which do not have hot-melt properties and have a curing-reactive functional group containing a carbon-carbon double bond and in which siloxane units represented by RSiO.sub.3/2 (where R is a monovalent organic group) or SiO.sub.4/2 account for at least 20 mol % of all the siloxane units; (B) a liquid, linear or branched organopolysiloxane having, in the molecule, at least two curing-reactive functional groups containing a carbon-carbon double bond; (C) a hardener; and (D) a functional filler. The composition as a whole has hot-melt properties. Uses of the curable granular silicone composition are also disclosed.
Component with electrically conductive converter layer
A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.
Light generating system comprising an elongated luminescent body
The invention provides an elongated luminescent body (100) comprising an elongated support (170) and a coating layer (180), wherein the elongated luminescent body (100) further comprises a body axis (BA), and a length parameter P of a body dimension perpendicular to the body axis (BA), wherein the length parameter P is selected from height (H), width (W) and diameter (D), wherein: —the elongated support (170) comprises a support material (171), a support material index of refraction n1, wherein the support material index of refraction n1 is at least 1.4, a support surface (172), and a support length (L1); —the coating layer (180) is configured on at least part of the support surface (172) over at least part of the support length (L1), wherein the coating layer (180) comprises a coating layer material (181), a coating layer index of refraction n2, wherein coating layer index of refraction n2 is at least 1.4, and a coating layer thickness (d1), wherein the coating layer material (181) has a composition different from the support material (171), wherein the coating layer material (181) comprises a luminescent material (120) configured to absorb one or more of UV radiation and visible light, and to convert into luminescent material light (8) having one or more wavelengths in one or more of the visible and the infrared; and —the support material (171) is transmissive for the luminescent material light (8), and (i) −0.2≤n1−n2≤0.2 and (ii) d1/P≤0.25 apply.