An electronic device is provided in this disclosure. In some embodiments, the electronic device includes a first substrate and a second substrate adjacent to the first substrate. In some embodiments, the electronic device includes a plurality of organic light emitting diodes, a filter layer, and a third substrate. At least a part of the plurality of organic light emitting diodes are disposed on the first substrate. The filter layer is disposed at least on the second substrate. The third substrate is disposed corresponding to the first substrate and the second substrate. The plurality of organic light emitting diodes and the filter layer are disposed under the third substrate.

An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.

A display device according to an embodiment of the present invention comprises a color conversion substrate and a color conversion layer which convert light of a first color emitted by an LED to a second color and emit the light in all directions. The present invention can reduce LED transfer processes as the color conversion layer is included, and light-emitting efficiency can be increased by using the side-surface light emitted from the LEDs.

Disclosed is a blue to white light conversion device, comprising: a light conversion subassembly comprising at least one light conversion layer, sandwiched between two light transmitting members, wherein the light conversion layer comprises a light conversion material comprising phosphors and/or quantum dots; at least one light diffusing subassembly neighboring the light conversion subassembly; and a top frame and a bottom frame surrounding the light diffusing subassembly and light conversion subassembly, respectively.

A light emitting device has a substrate, a plurality of light emitting elements mounted on the substrate, a first wavelength conversion members disposed so as to cover at least a portion of the upper surface of at least two light emitting elements of the plurality of light emitting elements, a sealing material sealing the plurality of light emitting elements and the first wavelength conversion members, and a transparent layer formed of a material different from the sealing material and is disposed between the substrate, the plurality of light emitting elements and the first wavelength conversion members, and the sealing material, wherein at least one side of each of the plurality of light emitting elements is disposed so as to face a side surface of the other light emitting element of the at least two light emitting elements, and not cover at least a portion of the non-facing side surfaces thereof.

A display device is provided. The display device includes a substrate, a driving circuit disposed on the substrate, and a light-emitting unit disposed on the driving circuit and electrically connected to the driving circuit. The light-emitting unit includes a first semiconductor layer, a quantum well layer disposed on the first semiconductor layer and a second semiconductor layer disposed on the quantum well layer. The second semiconductor layer includes a first top surface. The display device also includes a first protective layer disposed on the driving circuit and adjacent to the light-emitting unit. The first protective layer includes a second top surface and a plurality of conductive elements formed therein. The elevation of the first top surface is higher than the elevation of the second top surface.

A light emitting device includes a light emitting element, a light guide member, a reflecting member, a wavelength conversion member. The light emitting element has a light emitting surface and lateral surfaces. The light guiding member is provided on at least a portion of the lateral surfaces of the light emitting element. The reflecting member is provided on the lateral surface of the light emitting element with the light guiding member interposed therebetween. The wavelength conversion member is provided on the light emitting surface of the light emitting element, the light guiding member and the reflecting member. The wavelength conversion member is provided with a recess between an outer lateral surface of the wavelength conversion member and the light guiding member. The reflecting member is provided in the recess.

A light-emitting element contains negative ions and positive ions, and includes a solid ionic layer, a layer containing quantum dots, and a cathode electrode and an anode electrode. The ionic layer includes a p-type doped region on the anode electrode side containing the negative ions in a higher quantity than the positive ions, an n-type doped region on the cathode electrode side containing the positive ions in a higher quantity than the negative ions, and a junction region between the p-type doped region and the n-type doped region. The layer containing the quantum dots is adjacent to the junction region. Alternatively, the quantum dots are contained in the junction region. Alternatively, the quantum dots are adjacent to the junction region.

A first pixel configured to emit light of a first color, a second pixel configured to emit light of a second color; and a third pixel configured to emit light of a third color are provided. The first pixel includes a first subpixel and a second subpixel each including a quantum dot light-emitting layer. A light-emission peak wavelength of the second subpixel is longer than a light-emission peak wavelength of the first subpixel.

A light emitting module includes a light emitting diode chip mounted on a first surface of a support substrate, a wavelength conversion member formed on a light emitting surface of the light emitting diode chip, and a reflection member formed to surround a side surface of the wavelength conversion member, an electrode pad formed on a second surface of the support substrate to be electrically connected with the light emitting diode chip, a circuit board formed with a circuit pattern which is electrically connected with the electrode pad, and a conductive bonding material formed between the electrode pad and the circuit pattern to electrically connect the electrode pad and the circuit pattern. Coefficients of thermal expansion of the support substrate, the electrode pad and the conductive bonding material are different, and a coefficient of thermal expansion gradually increases from the support substrate to the circuit board.