A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

In an embodiment a method for producing a structured wavelength conversion layer includes providing a first wavelength conversion layer with wavelength converting properties such that electromagnetic radiation of a first wavelength range is converted into electromagnetic radiation of a second wavelength range, structuring of the first wavelength conversion layer into first regions and second regions, wherein the wavelength converting properties of the first wavelength conversion layer are impaired or removed in the first regions after structuring.

A display device includes a first substrate, a plurality of light-emitting elements on the first substrate and spaced from each other, wherein each of the plurality of light-emitting elements extends in a thickness direction of the first substrate, a common electrode on the first substrate and the plurality of light-emitting elements, a first insulating layer on the common electrode and the plurality of light-emitting elements, and a first reflective layer on side surfaces of the plurality of light-emitting elements with the first insulating layer therebetween, wherein the common electrode is in contact with a portion of the side surface of each of the plurality of light-emitting elements.

Micro light-emitting diode displays having hybrid inorganic-organic pixel structures and methods of fabricating micro light-emitting diode displays having hybrid inorganic-organic pixel structures are described. In an example, a micro light emitting diode pixel structure includes a plurality of inorganic micro light emitting diode devices in a dielectric layer. An organic light emitting diode device is in the dielectric layer and laterally adjacent to the plurality of inorganic micro light emitting diode devices. A transparent conducting oxide layer is above the dielectric layer and can act as a common cathode electrode for the inorganic and organic light emitting diodes.

A device including a phosphor layer having a plurality of holes or pockets arranged within the phosphor layer to reduce lateral light transmission. The phosphor layer can be sized and positioned to extend over a plurality of LED emitter pixels.

A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder filling the porous glass or silicon support structure.

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.