A method for the production of a conversion element (3) is disclosed, which comprises the following steps: A) provision of a first covering member (1) which has a first connecting surface (1a) and of a second covering member (2), B) insertion of at least one cavity (10) into the first covering member (1) on the first connecting surface (1a), C) filling of the at least one cavity (10) with a filling compound (30), which comprises a conversion material (31), D) applying of the second covering member (2) to the first connecting surface (1a) of the first covering member (1), E) cohesive connection of the first covering member (1) and of the second covering member (2).

A light emitting device includes: a substrate; a light emitting element disposed on the substrate, the light emitting element having an upper surface and a lateral surface; a reflecting layer located on the upper surface of the light emitting element; a first light-transmissive member having a first surface in contact with the lateral surface of the light emitting element, and a second surface that is inclined toward the substrate in a direction outward from the light emitting element; and a second light-transmissive member in contact with the second surface and covering the light emitting element. A refractive index of the first light-transmissive is smaller than a refractive index of the second light-transmissive member.

Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.

A light emitting device includes a light emitting element, a molded member, and a sealing member. The light emitting element is arranged on or above the molded member. The sealing member covers the light emitting element. The sealing member contains a phosphor, and a filler material. The phosphor can be excited by light of the light emitting element, and emit luminescent radiation. The filler material contains neodymium hydroxide, neodymium aluminate or neodymium silicate. The filler material absorbs a part of the spectrum of the mixed light of the light emitting element and the phosphor so that the other parts of the spectrum of this mixed light are extracted from the light emitting device.

A light emitting device including a bulb having a side surface, a board elongated longer in a first direction than in a second direction perpendicular to the first direction, and a plurality of light emitting elements mounted on the board. Each of the plurality of light emitting elements has an upper surface and a lower surface opposite to the upper surface, where the lower surface is mounted on the board. The device includes a plurality of sets of metal plates and leads electrically connected to the plurality of light emitting elements, and a wavelength conversion member covering the light emitting elements and a portion of each of the metal plates. The board, the light emitting elements, the sets of metal plates and leads, and the wavelength conversion member are disposed in the bulb. The upper surface of each of the light emitting elements faces the side surface of the bulb.

A display device includes a display panel and a backlight assembly. A light source unit of the backlight assembly includes a light source board including a conductive pattern, a light emitting chip on the light source board and electrically connected to the conductive pattern, a wavelength conversion member covering the light emitting chip and converting a wavelength of light emitted from the light emitting chip; and diffusion particles in the wavelength conversion member. The light emitting chip includes a rear surface facing the light source board, a top surface opposite to the rear surface and a side surface connecting the rear surface to the top surface. A density of the diffusion particles in the wavelength conversion member at the top surface of the light emitting chip is greater than a density of the diffusion particles in the wavelength conversion member at the side surface of the light emitting chip.

Embodiments of the present invention relate to a light emitting device package having uniform color characteristics, wherein the light emitting device package includes: a substrate including first and second lead frames; at least two light emitting devices disposed on the substrate and electrically connected to the first and second lead frames; an integrated wavelength conversion film disposed on the at least two light emitting devices and including a first region which overlaps the light emitting devices and a second region other than the first region; at least one recess which passes through the wavelength conversion film in a region corresponding to a gap between the adjacent light emitting devices; and a lens disposed on the substrate to cover the light emitting devices and the first and second lead frames.

A lighting device disclosed in an embodiment of the invention includes a substrate; a plurality of light sources spaced apart from each other at predetermined intervals on the substrate; a resin layer disposed on the substrate; a phosphor layer disposed on the resin layer and having a pattern layer including a concave portion and a convex portion formed on a surface facing the resin layer; and a diffusion layer disposed between the resin layer and the phosphor layer, wherein a thickness of the diffusion layer may be 10% or more and less than 50% of the maximum thickness of the phosphor layer.

A wavelength conversion device includes a substrate, a matrix supported by the substrate and containing inorganic material, a phosphor embedded in the matrix, and filler particles embedded in the matrix. A linear expansion coefficient of the filler particles is equal to or larger than 25 ppm/K and equal to or smaller than 790 ppm/K, and is larger than a linear expansion coefficient of the matrix. This wavelength conversion device suppresses warping of the substrate.