Patent classifications
H01L33/508
LED PACKAGE STRUCTURE AND LED LIGHT-EMITTING DEVICE
The present disclosure provides a LED package structure and a LED light-emitting device. The LED package structure comprises a LED chip and a wavelength converting layer covering the LED chip. The wavelength converting layer contains red phosphor, which has lower amount in edge portion than in center portion. It is possible to avoid direct or indirect excitation for generating red light in edge portion of the LED chip by adjusting the amount of red phosphor in edge portion to be lower, so that the color temperature in edge portion may be adjusted toward to high color temperature, and thus the phenomenon of yellow halo may be alleviated.
LIGHT-EMITTING DEVICE HAVING PHOTOLUMINESCENT LAYER
A light-emitting device comprises a layered structure between a first layer and a second layer. The first first layer has a refractive index n1 for first light having a wavelength λ.sub.a in air. The second layer has a refractive index n2 for the first light. The layered structure comprises: a photoluminescent layer having a first surface facing the first layer and a second surface facing the second layer; and a surface structure disposed on at least one selected from the group consisting of the first surface and the second surface of the photoluminescent layer. The refractive index n1 and the refractive index n2 are lower than a refractive index n.sub.wav-a of the photoluminescent layer for the first light. The layered structure has an effective thickness to more strongly emit TE polarized light than TM polarized light.
OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND FLASHLIGHT
Optoelectronic semiconductor component includes at least four different light sources each including at least one optoelectronic semiconductor chip, which during operation emit radiation having mutually different colour loci in the CIE standard chromaticity diagram, wherein the semiconductor component is designed to emit white or coloured light having a variable correlated colour temperature during operation.
LIGHT-EMITTING DIODE, MANUFACTURING METHOD THEREOF AND DISPLAY
A light emitting diode (LED) is provided in the disclosure. The LED includes a first contact electrode, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a current diffusion layer and a second contact electrode that are successively stacked. Multiple micro-structures extend through the light emitting layer and the second semiconductor layer in a stacking direction of the light emitting layer and the second semiconductor layer, where the multiple micro-structures each defines a borehole space. The borehole space has opposite ends which are respectively closed by the first semiconductor layer and the current diffusion layer. Quantum dots are filled in the borehole space of the multiple micro-structures. Lights of corresponding colors are emitted by exciting corresponding quantum dots with a part of blue lights emitted by the micro-structures.
Optoelectronic semiconductor device
A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.
Optoelectronic system
An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a first width; an adhesive material enclosing the optoelectronic element and having a second width larger than the first width; a phosphor structure formed between the optoelectronic element and the adhesive material; and a transparent substrate formed on the adhesive material.
Light emitting diodes with enhanced thermal sinking and associated methods of operation
Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.
HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF
At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
LIGHT-EMITTING DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME
A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.
LED MODULE
An LED module according to the present invention includes: a mounting substrate; a first LED group including a plurality of LEDs mounted in a first light-emitting area extending in a first direction on the mounting substrate; a second LED group including a plurality of LEDs mounted in a second light-emitting area located outside the first light-emitting area; a dam material surrounding a periphery of the second light-emitting area; a first fluorescent resin coating the first LED group and causing the first light-emitting area to emit light having a first color temperature; and a second fluorescent resin coating at least the second LED group and causing the second light-emitting area to emit light having a second color temperature higher than the first color temperature, and viscosity of the first fluorescent resin is higher than viscosity of the second fluorescent resin.