An electronic device including a first substrate, an isolating layer, a porous structure, and a light conversion unit is provided. The isolating layer is disposed on the first substrate and has an opening. The porous structure is disposed in the opening and has a plurality of pores arranged irregularly. The light conversion unit is disposed in the pores of the porous structure. The electronic device of the disclosure has ideal quality.

A light-emitting unit includes: a wiring board; a plurality of light-emitting elements provided on the wiring board and electrically coupled with a wire layer of the wiring board; a light reflecting member provided on the wiring board, the light reflecting member covering a lateral surface of each of the plurality of light-emitting elements; a light diffusing layer covering the plurality of light-emitting elements and the light reflecting member; a wavelength conversion layer located on or above the light diffusing layer; and a plurality of light reflecting layers located between the light diffusing layer and the wavelength conversion layer, each of the light reflecting layers being located above a corresponding one of the plurality of light-emitting elements. An upper surface of the light reflecting member has a recess which includes at least one concave surface, and there is a space between the concave surface and the light diffusing layer.

Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

A color film substrate, a display panel, and a display device are provided. The color film substrate includes a substrate; a color filter layer disposed on the substrate; and a color conversion layer disposed on a side of the color filter layer away from the substrate. In an area of the color conversion layer corresponding to each pixel unit, the color conversion layer includes at least two color conversion units. Colors of lights generated by color conversion materials of different color conversion units excited by excitation light are different. In a same color conversion unit, a concentration of a color conversion material in a side of the color conversion layer adjacent to the color filter layer is C1, and a concentration of a color conversion material in a side of the color conversion layer away from the color filter layer is C.sub.2, and |C.sub.1−C.sub.2|>0.

At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

A light emitting device includes a base that has an element mounting surface, a light emitting element that is mounted on the element mounting surface and that has maximum light intensity in a directly upward direction, and a coating member that contains a fluorescent body that is excited by light from the light emitting element, and that is constituted by a single layer that coats an upper part of the light emitting element. The fluorescent body exists at a position other than directly above the light emitting element.

A wavelength conversion material array is provided, including a system comprising: a light source configured to emit excitation light at an excitation wavelength; a heatsink; a wavelength conversion material located on the heatsink, the wavelength conversion material comprising a relative wavelength conversion area of unity divided into an array of spots, a number of the spots in a range of 4 to 12, the wavelength conversion material configured to emit light at a wavelength greater than the excitation wavelength when irradiated by the excitation light; and, an array of lenslets configured to: receive the excitation light from the light source and irradiate each of the spots of the wavelength conversion material with the excitation light, the lenslets in a one-to-one relationship with the number of spots; and collect the light emitted by the wavelength conversion material.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

An optoelectronic component includes a housing having a cavity in which an optoelectronic semiconductor chip having an emission face that emits light rays and a transparent potting material are arranged, wherein the cavity includes at least one side wall at least partly reflecting light rays incident on the side wall and reflectivity of which decreases as an operating period of the component increases, conversion particles are embedded into the potting material, which conversion particles convert light rays having a first wavelength incident on the conversion particles into light rays having a second wavelength, and scattering particles are embedded into the potting material, which scattering particles scatter light rays incident on the scattering particles and the scattering capability of which scattering particles increases as the operating period increases.

A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element to form a first thickness, has an average thickness, and includes a transparent binder and a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a light exiting surface and is disposed on the wavelength conversion layer. The D50 of the wavelength conversion particles is not great than 10 μm. A ratio of the average thickness to the D50 of the wavelength conversion layer is ranged from 6 to 20.