An electronic device is provided in this disclosure. In some embodiments, the electronic device includes a first substrate and a second substrate adjacent to the first substrate. In some embodiments, the electronic device includes a plurality of organic light emitting diodes, a filter layer, and a third substrate. At least a part of the plurality of organic light emitting diodes are disposed on the first substrate. The filter layer is disposed at least on the second substrate. The third substrate is disposed corresponding to the first substrate and the second substrate. The plurality of organic light emitting diodes and the filter layer are disposed under the third substrate.

An electronic device is provided in this disclosure. In some embodiments, the electronic device includes a first substrate and a second substrate adjacent to the first substrate. In some embodiments, the electronic device includes a plurality of organic light emitting diodes, a filter layer, and a third substrate. At least a part of the plurality of organic light emitting diodes are disposed on the first substrate. The filter layer is disposed at least on the second substrate. The third substrate is disposed corresponding to the first substrate and the second substrate. The plurality of organic light emitting diodes and the filter layer are disposed under the third substrate.

A light emitting device including a substrate, a first light emitter to emit light having a first color temperature, and a second light emitter to emit light having a second color temperature, in which the first light emitter has a first converter including first phosphors and a first resin, each first phosphor having different half-value widths, the second light emitter has a second converter including second phosphors and a second resin, each second phosphor having different peak wavelengths, at least one phosphor of the first converter has a half-value width of 33 nm to 110 nm, a distance between peak wavelengths of at least two phosphors of the second converter is 150 nm or less, at least one phosphor of the first converter has a particle size of 5 um to 50 um, and a thickness of the second converter is in 0.07 mm to 1.5 mm.

A light emitting device including a substrate, a first light emitter to emit light having a first color temperature, and a second light emitter to emit light having a second color temperature, in which the first light emitter has a first converter including first phosphors and a first resin, each first phosphor having different half-value widths, the second light emitter has a second converter including second phosphors and a second resin, each second phosphor having different peak wavelengths, at least one phosphor of the first converter has a half-value width of 33 nm to 110 nm, a distance between peak wavelengths of at least two phosphors of the second converter is 150 nm or less, at least one phosphor of the first converter has a particle size of 5 um to 50 um, and a thickness of the second converter is in 0.07 mm to 1.5 mm.

In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.

A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

A light emitting device and a light emitting module both having narrow spacing between emission faces, as well as a method of manufacturing light emitting device and a method of manufacturing light emitting module are provided.

A light emitting device 100 includes element structure bodies 15, at least one of the element structure bodies including a submount substrate 10, a light emitting element 20 disposed on the submount substrate 10, a light transmitting member 30 disposed on the light emitting element 20, and a first cover member 50 covering the lateral faces of the light emitting element 20 on the submount substrate 10, and a second cover member 60 supporting the element structure bodies 15 by covering the lateral faces of the element structure bodies 15.

A light-emitting element extending in one direction includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to an other side of the main body and having a width less than that of the main body; and an insulation film around at least a portion of the outer surface of the semiconductor core, wherein the insulation film includes a first insulation film around the first end of the semiconductor core; and a second insulation film around the second end of the semiconductor core, wherein the diameter of an outer surface of the first insulation film is the same as a diameter of an outer surface of the second insulation film.

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.