Patent classifications
H01L33/56
Light emitting device, backlight, and display panel with reflective layer
The present disclosure provides a light emitting device including a substrate, a conductive layer, first and second reflective layers, a light emitting element, and an encapsulation layer. The conductive layer is disposed on the substrate. The first reflective layer covers the conductive layer and has an opening exposing a portion of the conductive layer. The light emitting element is disposed in the opening and electrically connects to the conductive layer. The second reflective layer is disposed on the first reflective layer and surrounds the light emitting element, and the second reflective layer has an outer diameter. The encapsulation layer covers the light emitting element. There is a height between a highest point of the encapsulation layer and an upper surface of the first reflective layer, and the height is 0.1 to 0.5 times the outer diameter. The present disclosure also provides a backlight and a display panel.
HOUSING, OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD
The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.
HOUSING, OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD
The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.
Method for manufacturing display device using semiconductor light-emitting elements and display device
The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.
Method for manufacturing display device using semiconductor light-emitting elements and display device
The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.
Electronic device
The present disclosure provides an electronic device including a substrate and at least one light emitting unit. The light emitting unit includes a light emitting diode, a protective layer, and a light conversion layer. The protective layer includes a portion having a ripped section and not overlapped with the light emitting diode in a top view direction of the electronic device. The electronic device of the present disclosure may provide an electronic device that may reduce the influence from the outside or a subsequent process on the light emitting diode and improve luminance performance and reliability.
Light-emitting devices for horticulture applications
Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.
Light-emitting devices for horticulture applications
Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.
Fabrication of thin-film encapsulation layer for light-emitting device
An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.
LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME
A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.