A light emitting device includes a first semiconductor laser element, a light reflecting member, a base member, and a wire. The base member includes a frame part forming a frame. The frame part has a step portion inside of the frame, a bonding surface bonded to the bottom part, a first inner surface extending below the bonding surface, a second inner surface extending above the bonding surface, a first planar surface defining a planar surface of the step portion on an upper surface side, and a first electrode layer and a second electrode layer electrically connected to each other. The second electrode layer is disposed on the first planar surface. The wire is bonded to the second electrode layer and electrically connected to the first semiconductor laser element. A width of the bonding surface is greater on a first planar surface side than on an opposite side.

A thermally conductive silicone composition with good workability in a pin transfer process, and with which the cured product obtained has high adhesive strength and high heat dissipation. The composition includes (A) a straight-chain organopolysiloxane having at least two silicon atom-bonded alkenyl groups per molecule; (B) an organopolysiloxane resin; (C) organohydrogenpolysiloxane; (D) a heat dissipating filler powder mixture of a first collection of heat dissipating filler powder having an average particle size of no less than 0.2 .Math.m but less than 1 .Math.m and a second collection of heat dissipating filler powder having an average particle size of no less than 2 .Math.m but less than 20 .Math.m (at a mass ratio 3:7 to 2:8); (E) silica particles having an average primary particle size of less than 1 .Math.m; and (F) a straight-chain organopolysiloxane having a silicon atom-bonded alkoxy group at one or both ends of the molecular chain.

A display device includes a display layer including a light emitting element, a heat dissipation part disposed on a rear surface of the display layer, the heat dissipation part including a heat dissipation layer, and a resin part sealing at least a portion of the heat dissipation layer. In a plan view, the heat dissipation layer extends by a same length as the display layer or extends farther than the display layer.

An UV or DUV light-emitting diode package includes: a foundation; a first metal layer, a second metal layer, and third metal layer formed on a top surface of the foundation, wherein the first metal layer and the second metal layer are electrically isolated by a first gap, the third metal layer surrounds the first and second metal layers and is electrically isolated from the first and second metal layers by a second gap; a lens attached to the top surface of the foundation, wherein a cavity is formed between the foundation and the lens; a chip disposed in the cavity, wherein an anode of the chip is electrically connected to the first metal layer and a cathode of the chip is electrically connected to the second metal layer; and a fluid encapsulate, wherein the cavity is fully or partially filled with the fluid encapsulate.

Provided is a display panel including a first substrate, a light-emitting unit on the first substrate, and a light-converting unit. The light-converting unit converts a first light having a first peak wavelength emitted by the light-emitting unit into a second light having a second peak wavelength. The first peak wavelength is smaller than the second peak wavelength. The light-converting unit includes light conversion particles and first heat dissipation particles. The thermal conductivity of the first heat dissipation particles is greater than 50 W.Math.m.sup.−1.Math.K.sup.−1. Provided is another display panel provided including a first substrate, a light-emitting unit on the first substrate, a pixel define layer on the first substrate, and a separation layer. The pixel define layer includes an opening to accommodate the light-emitting unit. An adhesive layer is on the first substrate. At least one of the pixel define layer and the adhesive layer includes the heat dissipation particles.

A metal base substrate of the present invention includes a metal substrate, an insulating layer, and a circuit layer, which are laminated in this order, in which the insulating layer contains an insulating resin and an inorganic filler, and an elastic modulus (unit: GPa) at 100° C. of the insulating layer, an elastic modulus (unit: GPa) at 100° C. of the circuit layer, a thickness (unit: μm) of the insulating layer, a thickness (unit: μm) of the circuit layer, and a thickness (unit: μm) of the metal substrate are set so as to satisfy predetermined formulae.

A light emitting apparatus includes: an electrically insulating base member that has first and second sides extending in a width direction, and third and fourth sides extending in a length direction, wherein the third and fourth sides are longer than the first and second sides; a plurality of electrically conductive pattern portions; a plurality of light emitting devices mounted on the electrically conductive pattern portions, the light emitting devices being arrayed in the length direction; a protection element that is flip chip mounted on the electrically conductive pattern portions and located, in the plan view, between the light emitting devices and the third side of the base member in the width direction; a first resin part that has a frame shape; a second resin part that is located in the first resin part; and at least one transparent member located on the light emitting devices.

A light emitting element includes: a semiconductor layered structure; a first electrically insulating film covering surfaces of the semiconductor layered structure and defining a first opening in each of a first region and a second region of a first semiconductor layer, and defining a second opening in a portion above a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer through each first opening; a second electrode electrically connected to the second semiconductor layer through the second opening; a first terminal located on the first electrode and electrically connected to the first electrode; a second terminal located on the second electrode and electrically connected to the second electrode; and a metal member located on a portion of the first electrically insulating film located over the second semiconductor layer and electrically insulated from the first terminal and the second terminal.

A copper base substrate of the present invention, in which a copper substrate, an insulating layer, and a circuit layer, are laminated in an order in the copper substrate, a ratio of a thickness (unit: .Math.m) to an elastic modulus (unit: GPa) at 100° C. is 50 or more in the insulating layer, and the circuit layer has an elastic modulus at 100° C. of 100 GPa or less.

In an embodiment a component includes a semiconductor body, a converter layer, a filling layer and an intermediate layer arranged in a vertical direction between the semiconductor body and the converter layer, wherein the semiconductor body has a surface which faces the converter layer, is structured and has vertical recesses, wherein the vertical recesses are filled with a material of the filling layer that has a higher thermal conductivity than silicone, wherein the intermediate layer or the semiconductor body has a higher mechanical hardness than the filling layer, and wherein the structured surface of the semiconductor body has local elevations and local recesses, the structured surface including exclusively the surface of an n-type or a p-type semiconductor layer.