An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 μm or larger and 50 μm or smaller.

Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Apparatus for providing electrical energy, in particular for providing electrical energy from a heat flow originating from an electric motor, including a first component part, a second component part, wherein a Peltier element is arranged between the first component part and the second component part, said Peltier element being at least partially surrounded by a layer of insulation provided between the first component part and the second component part, with the result that the Peltier element forms a thermal bridge between the first and the second component parts, and wherein the first and the second component parts are selected from the following group: gear mechanism, motor and adapter plate.

An apparatus for cooling electronic components includes a chassis having a hot side compartment having one or more first electrical components and a cold side compartment having one or more second electrical components. A coolant channel is connected to the cold side compartment. At least one thermoelectric cooler (TEC) is positioned within the cold side compartment. The TEC has a cold plate and a hot plate, the hot plate being connected to the coolant channel and the cold plate being connected to the one or more second electrical components. A method for cooling electronic components using at least one TEC includes identifying an amount of heat to be removed from the one or more second electronic components and determining the TEC with the peak performance based on a best Delta T. The method includes monitoring the Delta T and adjusting the input voltage to maintain the optimum Delta T.

Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

An optical power transfer device with an embedded active cooling chip is disclosed. The device includes a cooling chip made of a semiconductor material, and a first subassembly and a second subassembly mounted on the cooling chip. The cooling chip comprises at least one metallization layer on a portion of a first surface of the cooling chip, at least one inlet through a second surface of the cooling chip, wherein the second surface is opposite to the first surface, at least one outlet through the second surface and one or more micro-channels extending between and fluidly coupled to the at least one inlet and the at least one outlet. A cooling fluid flows through the one or more micro-channels. The first subassembly is mounted on the at least one metallization layer and comprises a laser. The second subassembly comprises a phototransducer configured to receive a laser beam from the laser.

A video-wall module is disclosed. In an embodiment a video-wall module includes a printed-circuit board, a plurality of light-emitting diode chips arranged at the printed-circuit board, a circuit chip fixed to the printed-circuit board, wherein the circuit chip is connected with electrical connections of the light-emitting diode chips in order to electrically actuate the light-emitting diode chips and a housing for the circuit chip at least partially formed by the printed circuit board, wherein the light-emitting diode chips are divided into a first area and a first edge area surrounding the first area, and wherein the light-emitting diode chips in the first area comprise a smaller radiation wavelength than the light-emitting diode chips in the first edge area on average at the same temperature.

An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.

A light emitter includes a substrate, a first mirror layer provided on the substrate, a columnar section including an active layer provided on a side of the first mirror layer that is the side opposite the substrate and a second mirror layer provided on a side of the active layer that is the side opposite the first mirror layer, a semi-insulating member provided on the side surface of the columnar section and having thermal conductivity higher than the thermal conductivity of the first mirror layer and the thermal conductivity of the second mirror layer, and a sub-mount which has a first surface bonded to the semi-insulating member and through which light produced in the active layer passes, and a second surface of the sub-mount that is the surface opposite the first surface is oriented in the direction in which the light produced in the active layer exits.

A heat dissipation device including two insulation layers, two metal layers, a semiconductor layer, and a phosphor layer is provided. The semiconductor layer is disposed between the two metal layers, and the whole of the semiconductor and the two metal layers is disposed between the two insulation layers. The phosphor layer is disposed on one of the insulation layers. A projector is also provided.