Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

An integrated circuit includes a first chip bonded to a second chip. The first chip includes gate all around transistors on a substrate. The first chip includes backside conductive vias extending through the substrate to the gate all around transistors. The second chip includes electronic circuitry electrically connected to the transistors by the backside conductive vias.

An integrated circuit includes a first chip bonded to a second chip. The first chip includes gate all around transistors on a substrate. The first chip includes backside conductive vias extending through the substrate to the gate all around transistors. The second chip includes electronic circuitry electrically connected to the transistors by the backside conductive vias.

In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

A method for transferring light emitting elements during manufacture of a display panel includes providing light emitting elements; providing a first electromagnetic plate defining adsorption positions; providing a receiving substrate defining receiving areas; energizing the first electromagnetic plate to magnetically adsorb one of the light emitting elements at each adsorption position; facing the first electromagnetic plate to the receiving substrate; and transferring the light emitting elements to one corresponding receiving area of the receiving substrate.

A method for transferring light emitting elements during manufacture of a display panel includes providing light emitting elements; providing a first electromagnetic plate defining adsorption positions; providing a receiving substrate defining receiving areas; energizing the first electromagnetic plate to magnetically adsorb one of the light emitting elements at each adsorption position; facing the first electromagnetic plate to the receiving substrate; and transferring the light emitting elements to one corresponding receiving area of the receiving substrate.

A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.