A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials.

A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials.

A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

A package includes a first package component, a second package component over the first package component, and a solder region bonding the first package component to the second package component. At least one ball-height control stud separates the first package component and the second package component from each other, and defines a standoff distance between the first package component and the second package component.

A semiconductor assembly includes a substrate with electrically conductive regions and a semiconductor package. The semiconductor package includes a semiconductor die, first and second terminals, and a mold compound. The die has opposing first and second main surfaces, an edge disposed perpendicular to the first and second main surfaces, a first electrode at the first main surface, and a second electrode at the second main surface. The first terminal is attached to the first electrode. The second terminal is attached to the second electrode. The mold compound encloses at least part of the die and the first and second terminals so that each of the terminals has a side parallel with and facing away from the die that remains at least partly uncovered by the mold compound. The first and second terminals of the semiconductor package are connected to different ones of the electrically conductive regions of the substrate.

A semiconductor assembly includes a substrate with electrically conductive regions and a semiconductor package. The semiconductor package includes a semiconductor die, first and second terminals, and a mold compound. The die has opposing first and second main surfaces, an edge disposed perpendicular to the first and second main surfaces, a first electrode at the first main surface, and a second electrode at the second main surface. The first terminal is attached to the first electrode. The second terminal is attached to the second electrode. The mold compound encloses at least part of the die and the first and second terminals so that each of the terminals has a side parallel with and facing away from the die that remains at least partly uncovered by the mold compound. The first and second terminals of the semiconductor package are connected to different ones of the electrically conductive regions of the substrate.

Some embodiments include a method of forming integrated circuitry. A first assembly is formed to have a first dielectric material, a first conductive pad and a conductive structure. The first assembly has a first surface which includes a surface of the first dielectric material, a surface of the first conductive pad and a surface of the conductive structure. A second assembly is formed to have a second dielectric material and a second conductive pad. The second assembly has a second surface which includes a surface of the second dielectric material and a surface of the second conductive pad. The first surface is placed directly against the second surface. The surface of the first dielectric material is bonded with the surface of the second dielectric material, and the surface of the first conductive pad is bonded with the surface of the second conductive pad.